M
Masataka Mizuno
Researcher at Osaka University
Publications - 101
Citations - 2161
Masataka Mizuno is an academic researcher from Osaka University. The author has contributed to research in topics: Vacancy defect & Positron. The author has an hindex of 16, co-authored 98 publications receiving 1952 citations. Previous affiliations of Masataka Mizuno include Kyoto University & Kobe Steel.
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Mechanism of electrical conductivity of transparent InGaZnO 4
TL;DR: In this article, the electronic structure of the InGaZnO-4-4 layer was calculated using relaxation calculations using classical two-center potentials, and the molecular orbitals of model clusters for the relaxed structure, which were calculated by the discrete variational $X\ensuremath{\alpha}$ method using a model cluster, show strong two-dimensional structures.
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The effect of hydrogen on vacancy generation in iron by plastic deformation
Kouji Sakaki,Kouji Sakaki,T. Kawase,M. Hirato,Masataka Mizuno,Hideki Araki,Yasuharu Shirai,M. Nagumo +7 more
TL;DR: Positron lifetime spectroscopy was applied to examine the synergistic effect of hydrogen and plastic straining on the vacancy generation in iron as discussed by the authors, showing that the presence of hydrogen enhances the generation of vacancies, rather than of dislocations.
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Effect of silicon content on densification, mechanical and thermal properties of Al-xSi binary alloys fabricated using selective laser melting
TL;DR: In this paper, the effect of the silicon content on the densification of Al-xSi binary alloys (x=0, 1, 4, 7, 10, 12, and 20 mass%) fabricated using selective laser melting (SLM) was systematically studied.
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Identification of ultradilute dopants in ceramics.
Isao Tanaka,Teruyasu Mizoguchi,Masafumi Matsui,Satoru Yoshioka,Hirohiko Adachi,Tomoyuki Yamamoto,Toshihiro Okajima,Masanori Umesaki,Wai-Yim Ching,Yoshiyuki Inoue,Masataka Mizuno,Hideki Araki,Yasuharu Shirai +12 more
TL;DR: NEXAFS analysis and first-principles calculations are used to study the local environments of Ga dopants at levels of 10 p.p.m in otherwise high-purity MgO to provide a general method of identifying the defect states of ultradilute dopants in ceramics.
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Electronic structure of indium oxide using cluster calculations
TL;DR: In this article, the In-O bond is found to be predominant in the valence band and both O-O and In-In bonds are much weaker in the 3-shells.