The use of silicon nanostructures in solar cells offers a number of benefits, such as the fact they can be used on flexible substrates. A silicon wire-array structure, containing reflecting nanoparticles for enhanced absorption, is now shown to achieve 96% peak absorption efficiency, capturing 85% of light with only 1% of the silicon used in comparable commercial cells. Si wire arrays are a promising architecture for solar-energy-harvesting applications, and may offer a mechanically flexible alternative to Si wafers for photovoltaics1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17. To achieve competitive conversion efficiencies, the wires must absorb sunlight over a broad range of wavelengths and incidence angles, despite occupying only a modest fraction of the array’s volume. Here, we show that arrays having less than 5% areal fraction of wires can achieve up to 96% peak absorption, and that they can absorb up to 85% of day-integrated, above-bandgap direct sunlight. In fact, these arrays show enhanced near-infrared absorption, which allows their overall sunlight absorption to exceed the ray-optics light-trapping absorption limit18 for an equivalent volume of randomly textured planar Si, over a broad range of incidence angles. We furthermore demonstrate that the light absorbed by Si wire arrays can be collected with a peak external quantum efficiency of 0.89, and that they show broadband, near-unity internal quantum efficiency for carrier collection through a radial semiconductor/liquid junction at the surface of each wire. The observed absorption enhancement and collection efficiency enable a cell geometry that not only uses 1/100th the material of traditional wafer-based devices, but also may offer increased photovoltaic efficiency owing to an effective optical concentration of up to 20 times.

Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

Semiconductor nanowires represent an important class of nanostructure building block for photovoltaics as well as direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of solar energy harvesting. In addition, we have also discovered that the thermoconductivity of the silicon nanowires can be significantly reduced due to phonon scattering, pointing to a very promising approach to design better thermoelectrical materials. It is important to note that the engines that generate most of the world's power typically operate at only 30–40 per cent efficiency, releasing roughly 15 terawatts of heat to the environment. If this “wasted heat” could be recycled, the impact globally would be enormous. Our silicon nanowire thermoelectric technology could have a significant impact in alternative energy generation.

Semiconductor nanowires for energy conversion.

Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

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Silicon nanostructures for photonics and photovoltaics

Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

Silicon Nanowires for Photovoltaic Solar Energy Conversion

Role of the dissolved zinc ion and reactive oxygen species in cytotoxicity of ZnO nanoparticles.

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm2 open-circuit voltages in the range of 230–280 mV and a short-circuit current density of 2 mA cm−2 were obtained.

/pdf/silicon-nanowire-based-solar-cells-1gf4x9l8yp.pdf

Silicon nanowire-based solar cells.

In this paper, the fundamental advantage of highly conductive transparent polymers as hole transport layers in hybrid solar cells is demonstrated. The substantial efficiency improvement of hybrid n-type silicon (n-Si)/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) solar cells by adding organic solvents to the polymer dispersion is investigated, and a model that explains reasons and mechanisms for that improvement is given. Open-circuit voltages of 600 mV were measured, which are comparable to conventional diffused silicon pn-junction wafer cells. It is shown by means of X-ray photoelectron spectroscopy that the PEDOT versus PSS ratio plays an important role for charge carrier transport in the PEDOT:PSS layer as well as for charge carrier separation at the n-Si/PEDOT:PSS interface. A shell of insulating PSS segregates at the surface of PEDOT:PSS grains and represents a considerable barrier for charge carrier transport and charge carrier separation, influencing the conductivity of the ...

The Role of Hole Transport in Hybrid Inorganic/Organic Silicon/Poly(3,4-ethylenedioxy-thiophene):Poly(styrenesulfonate) Heterojunction Solar Cells

We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration (N
 D). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages (V
 oc) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of N
 D leads to an increase of V
 oc with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on N
 D is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.

Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

Silicon nanowires (SiNWs) combined with a conducting polymer are studied to constitute a hybrid organic/inorganic solar cell. This type of cell shows a particularly high interfacial area between SiNWs and the polymer so that interfacial control and interface optimization are required. For that purpose, we terminated the SiNW surfaces with well selected functional groups (molecules) such as native oxide (hereinafter SiO2-SiNW), hydrogen (hereinafter H-SiNW) and methyl (hereinafter CH3-SiNW). A radial hetero-junction solar cell is formed, and the cell parameters with and without interface control by functionalization with molecules are compared. Electronically, the three surfaces were close to flat-band conditions. The CH3-SiNW, H-SiNW and SiO2-SiNW produced a surface dipole of −0.12, +0.07 and 0.2 eV and band bending of 50, 100 and 170 meV, respectively. The surface properties of functionalized SiNWs are investigated by photoelectron yield (PY) and photoemission spectroscopy. PY studies on functionalized SiNWs are presented for the first time, and our results show that this type of measurement is an excellent option to carry out interface optimization of NWs for envisaged nano-electronic and photonic applications. The solar cell efficiency is increased dramatically after terminating the surface with CH3 molecules due to the decrease of the defect emission. The differently functionalized SiNW surfaces showed identical absorbance, reflectance and transmission so that a change in PY can be attributed to the Si–C bonds at the surface. This finding permits the design of new solar cell concepts. Copyright © 2013 John Wiley & Sons, Ltd.

Matthias Pietsch

Papers

Silicon nanowire-based solar cells.

The Role of Hole Transport in Hybrid Inorganic/Organic Silicon/Poly(3,4-ethylenedioxy-thiophene):Poly(styrenesulfonate) Heterojunction Solar Cells

Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

Heterojunction based hybrid silicon nanowire solar cell: surface termination, photoelectron and photoemission spectroscopy study