Showing papers by "Max C. Lemme published in 2004"
TL;DR: In this article, the fabrication of n-type multi-wire MOSFETs on SOI material with triple-gate structures is presented, and the output and transfer characteristics of devices with a gate length of 70 nm and a MESA width of 22 nm demonstrate clearly the suppression of short channel effects (SCE).
Abstract: The fabrication of n-type multi-wire MOSFETs on SOI material with triple-gate structures is presented. The output and transfer characteristics of devices with a gate length of 70 nm and a MESA width of 22 nm demonstrate clearly the suppression of short channel effects (SCE). In addition, these triple-gate structures are compared with planar SOI devices of comparable dimensions. The influence of biasing the substrate (back gate) is analyzed and compared to simulation data.
43 citations
TL;DR: In this article, a highly selective, anisotropic gate etch process using HBr and O 2 was described, as the reactive gases in an inductively coupled plasma reactive ion etch tool.
35 citations
TL;DR: In this paper, the thermal behavior and vapor absorption spectra of Li, Na and K sulfates in graphite vaporizers were investigated using a UV spectrometer with a charge-coupled device (CCD) detector.
22 citations
TL;DR: In this paper, the vaporization of micrograms of sulfur, sulfuric acid, Cu, Hg, Ni and Zn sulfides and Ca sulfate in graphite electrothermal vaporizers (ETV) for atomic absorption spectrometry is investigated using UV spectrometer with charge-coupled device (CCD) detector and deuterium light source.
21 citations
TL;DR: In this paper, n-type triple-crate metal-oxide-semiconductor field effect transistors (MOSFETs) are presented, where laser interference lithography (LIL) is integrated into a silicon-on-insulator (SONI).
Abstract: In this work, n-type triple-crate metal-oxide-semiconductor field effect transistors (MOSFETs) are presented, where laser interference lithography (LIL) is integrated into a silicon-on-insulator (S
18 citations
TL;DR: A dual gate metal oxide semiconductor field effect transistor with electrically variable shallow junctions (EJ-MOSFET) was constructed in this paper on silicon on insulator (SOI) substrates.
Abstract: A dual gate metal oxide semiconductor field effect transistor (MOSFET) with electrically variable shallow junctions (EJ-MOSFET) has been fabricated on silicon on insulator (SOI) substrates. This ki ...
8 citations
TL;DR: In this article, the fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented, where the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon.
3 citations
TL;DR: In this article, NiAlN was used as a gate material for submicron CMOS technology for the first time, and the NiAlAlN films were reactively sputtered from a Ni"0"."5Al" 0"."0"5 target in a mixture of argon and nitrogen gas.
2 citations