M
Maximilian Bauernfeind
Researcher at University of Würzburg
Publications - 12
Citations - 1319
Maximilian Bauernfeind is an academic researcher from University of Würzburg. The author has contributed to research in topics: Band gap & Electronic structure. The author has an hindex of 6, co-authored 10 publications receiving 1063 citations.
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Journal ArticleDOI
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
Felix Reis,Gang Li,Gang Li,Lenart Dudy,Maximilian Bauernfeind,Stefan Glass,Werner Hanke,Ronny Thomale,J. Schäfer,Ralph Claessen +9 more
TL;DR: The combined theoretical and experimental results demonstrate a concept for a quantum spin Hall wide-gap scenario, where the chemical potential resides in the global system gap, ensuring robust edge conductance.
Journal ArticleDOI
Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm
Felix Reis,Gang Li,Lenart Dudy,Maximilian Bauernfeind,Stefan Glass,Werner Hanke,Ronny Thomale,J. Schäfer,Ralph Claessen +8 more
TL;DR: In this article, the authors show how a new quantum spin Hall (QSH) paradigm based on substrate-supported atomic monolayers of a high-Z element can be achieved by making use of a new QSH paradigm.
Journal ArticleDOI
Tailoring the topological surface state in ultrathin α -Sn(111) films
V. A. Rogalev,Felix Reis,Florian Adler,Maximilian Bauernfeind,Jonas Erhardt,A. Kowalewski,M. R. Scholz,Lenart Dudy,L. B. Duffy,Thorsten Hesjedal,Moritz Hoesch,Gustav Bihlmayer,J. Schäfer,Ralph Claessen +13 more
TL;DR: In this article, the electronic structure of very low-thick Sn films in the very low thickness regime grown on InSb(111)A was investigated and the Dirac point of this TSS was found to be 200 meV below the Fermi level for thinner Sn films.
Journal ArticleDOI
Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates
Stefan Glass,Felix Reis,Maximilian Bauernfeind,J. Aulbach,M. R. Scholz,Florian Adler,Lenart Dudy,Gang Li,Gang Li,Ralph Claessen,J. Schäfer +10 more
TL;DR: In this paper, a novel approach to hydrogen etching of SiC, based on stepwise ultrapure H exposure with slow substrate cooling rates, is reported. And the results show that the SiC sheets are removed in layer-by-layer fashion, leading to large terraces with straight rims.
Journal ArticleDOI
Towards topological quasifreestanding stanene via substrate engineering
Domenico Di Sante,Philipp Eck,Maximilian Bauernfeind,Marius Will,Ronny Thomale,J. Schäfer,Ralph Claessen,Giorgio Sangiovanni +7 more
TL;DR: In this article, an interposing buffer layer mediates between monolayer and substrate in order to optimize the quantum spin Hall effect (QSHE) setting for stanene, the Sn analog of graphene.