M
Melvin W. Montgomery
Researcher at Applied Materials
Publications - 16
Citations - 211
Melvin W. Montgomery is an academic researcher from Applied Materials. The author has contributed to research in topics: Photoresist & Layer (electronics). The author has an hindex of 9, co-authored 16 publications receiving 211 citations.
Papers
More filters
Patent
Method of preparing optically imaged high performance photomasks
TL;DR: In this paper, an organic antireflection coating was applied over a surface of a photomask which included a chrome-containing layer, and a chemically-amplified DUV photoresist over the organic antireslection coating.
Patent
Method of reshaping a patterned organic photoresist surface
TL;DR: In this article, a patterned photoresist is treated with an etchant plasma to reshape the surface of the patterned resist, where reshaping includes the removal of standing waves present on patterned surfaces, and removal of feet which may be present at the base of the surface.
Patent
Method of extending the stability of a photoresist during direct writing of an image upon the photoresist
TL;DR: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresists with a thin coating (topcoat) of a protective but transmissive material as mentioned in this paper.
Patent
Reticle fabrication using a removable hard mask
Christopher Dennis Bencher,Melvin W. Montgomery,Alex Buxbaum,Yung-Hee Yvette Lee,Jian Ding,Gilad Almogy,Wendy H. Yeh +6 more
TL;DR: In this article, the critical dimension bias for reticle fabrication is reduced by using a hard mask to which the pattern is transferred from a photoresist, which is matched to the reflective characteristics of the radiation-blocking layer.
Patent
Organic bottom antireflective coating for high performance mask making using optical imaging
TL;DR: In this paper, a method of optically fabricating a photomask using a direct write continuous wave laser is described, comprising of a series of steps including applying an organic antireflection coating over a chrome-containing layer, applying a chemically-amplified DUV photoresist over the organic antireslection coating, and exposing a surface of the DUV image to the direct write continuously wave laser.