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Patent

Method of preparing optically imaged high performance photomasks

TLDR
In this paper, an organic antireflection coating was applied over a surface of a photomask which included a chrome-containing layer, and a chemically-amplified DUV photoresist over the organic antireslection coating.
Abstract
One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

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Citations
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References
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Patent

Positive-working photoresist composition

TL;DR: In this article, a positive working photoresist composition comprising an alkali-soluble novolak resin obtained by condensation reaction of a mixture of phenols, which are constituted of specified proportions of m-cresol and two kinds of specific phenols with an aldehyde and having a Mw/Mn ratio of from 1.5 to 4.0 is presented.
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TL;DR: In this paper, an improved photoimagable cationically polymerizable epoxy based coating material is provided, which includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which is a condensation product of epichlorohydrin and bisphenol A having a molecular weight between about 40,000 and 130,000.
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TL;DR: In this article, the RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the rchex layer.
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Antireflective coating compositions comprising photoacid generators

TL;DR: In this paper, a photoacid generator that is activated during exposure of an overcoated photoresist is proposed. But the generator is not suitable for use as an antireflective composition, particularly for deep UV applications.
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Mid and deep-UV antireflection coatings and methods for use thereof

TL;DR: An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation was proposed in this article.