There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Light emitting device and method of manufacturing the same

Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.

Spin-on-glass anti-reflective coatings for photolithography

Methods and compositions for performing RNA interference comprising a wide variety of stabilized siRNAs suitable for use in serum-containing media and for in vivo applications, such as therapeutic applications, are provided. These siRNAs permit effective and efficient applications of RNA interference to applications such as diagnostics and therapeutics through the use of one or more modifications including orthoesters, terminal conjugates, modified linkages and 2'modified nucleotides. Uniquely modified siRNAs have been developed that reduces off-target effects incurred in gene-silencing. The modifications include phosphorylation of the first 5' terminal antisense nucleotide; 2' carbon modifications of the first and second or first, second, and third 5' terminal antisense nucleotides; and optionally 2' carbon modifications of the first and second or first, second, and third 5' terminal sense nucleotide. Control and exaequo molecules are also provided. siRNA molecules and related control, trackability and exaequo agents with specific stability modifications were developed.

Modified polynucleotides for use in rna interference

Methods and compositions for performing RNA interference with decreased off-target effects are provided. The methods and compositions permit effective and efficient applications of RNA interference to applications such as diagnostics and therapeutics through the use of modifications to the siRNA. Uniquely modified siRNAs have been developed that reduce off-target effects incurred in gene-silencing. The modifications comprise 2'-O-alkyl or mismatch modification(s) at specific positions on the sense and/or antisense strands.

Modified polynucleotides for reducing off-target effects in rna interference

A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.

Method of manufacturing light emitting device

One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.

Method of preparing optically imaged high performance photomasks

In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Method of increasing the shelf life of a blank photomask substrate

We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.

Method of producing a patterned photoresist used to prepare high performance photomasks

As mask specifications continually tighten with the ever- present progression of Moore's law, mask manufacturing specifications have become increasingly difficult to achieve. Global process optimization from coast to etch is critical for achieving the required mask performance. As an Applied Materials company, Etec is in a unique position within the maskmaking industry to introduce mask manufacturing solutions that are optimized across a number of process steps. Working with the Applied Materials photomask etch team, Etec's laser mask-patterning group characterized and implemented an integrated process recipe for the deep UV, raster-scan, continuous-wave, laser mask- patterning ALTA 4000 system and the Applied Materials Tetra Photomask Etch System.

Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution

In this paper, we describe the studies conducted at Etec Systems, Inc., an Applied Materials company, using various resists from photoresist manufacturers. Etec undertook this investigation with the objective of creating 257-nm resist processes that would allow the continued use of precoated mask blanks from commercial suppliers. Successful delivery of this technology would allow the industry to adopt next-generation maskmaking systems without having to change current business practices, avoiding being forced to invest heavily in capital equipment, facilities, and the associated technology development programs necessary for local coating of mask blanks. The main criteria used to select an appropriate resist candidate were commercial availability, environmental stability, and across-plate critical dimension (CD) uniformity. The aging data provides an indication of shelf life-pre-exposure ranging from hours to months of delay. Methods for measuring the incoming plate quality are highlighted. The importance of a highly consistent, tightly controlled bake process-post-exposure bake (PEB) and post-apply bake (PAB)-is illustrated in detail. This paper also shows controlled CD structures below the wavelength: 257 nm. The authors describe the processing difficulties encountered while attempting to create a photomask manufacturing-capable process and the techniques used to address the difficulties. Bottom antireflective coatings, photobase, and chemical amplification are areas of focus, as are their resulting effects on the final photomask.

Scott E. Fuller

Papers

Method of preparing optically imaged high performance photomasks

Method of increasing the shelf life of a blank photomask substrate

Method of producing a patterned photoresist used to prepare high performance photomasks

Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution

Photoresist processing for high-resolution DUV lithography at 257 nm