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https://pr.ibs.re.kr/bitstream/8788114/3718/1/Recent%20development_Materials%20Today_Young%20Hee%20Lee.pdf

Recent Development of Two-Dimensional Transition Metal Dichalcogenides and Their Applications

50 Years of Image Analysis

This paper describes the preparation, characterization, and electrochemical properties of reduced graphene sheet films (rGSFs), investigating especially their electrochemical behavior for several redox systems and electrocatalytic properties towards oxygen and some small molecules. The reduced graphene sheets (rGSs) are produced in high yield by a soft chemistry route involving graphite oxidation, ultrasonic exfoliation, and chemical reduction. Transmission electron microscopy (TEM), X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy clearly demonstrate that graphene was successfully synthesized and modified at the surface of a glassy carbon electrode. Several redox species, such as Ru(NH3)63+/2+, Fe(CN)63−/4−, Fe3+/2+ and dopamine, are used to probe the electrochemical properties of these graphene films by using the cyclic voltammetry method. The rGSFs demonstrate fast electron-transfer (ET) kinetics and possess excellent electrocatalytic activity toward oxygen reduction and certain biomolecules. In our opinion, this microstructural and electrochemical information can serve as an important benchmark for graphene-based electrode performances.

Preparation, Structure, and Electrochemical Properties of Reduced Graphene Sheet Films

Review: Carbon nanotube based electrochemical sensors for biomolecules.

Atmospheric-pressure chemical vapor deposition (CVD) is used to grow monolayer MoS2 two-dimensional crystals at elevated temperatures on silicon substrates with a 300 nm oxide layer. Our CVD reaction is hydrogen free, with the sulfur precursor placed in a furnace separate from the MoO3 precursor to individually control their heating profiles and provide greater flexibility in the growth recipe. We intentionally establish a sharp gradient of MoO3 precursor concentration on the growth substrate to explore its sensitivity to the resultant MoS2 domain growth within a relatively uniform temperature range. We find that the shape of MoS2 domains is highly dependent upon the spatial location on the silicon substrate, with variation from triangular to hexagonal geometries. The shape change of domains is attributed to local changes in the Mo:S ratio of precursors (1:>2, 1:2, and 1:<2) and its influence on the kinetic growth dynamics of edges. These results improve our understanding of the factors that influence the...

Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition

Synthetic 2D crystal films grown by chemical vapor deposition are typically polycrystalline, and determining grain size within domains and continuous films is crucial for determining their structure. Here we show that grain boundaries in the 2D transition metal dichalcogenide WS2, grown by CVD, can be preferentially oxidized by controlled heating in air. Under our developed conditions, preferential degradation at the grain boundaries causes an increase in their physical size due to oxidation. This increase in size enables their clear and rapid identification using a standard optical microscope. We demonstrate that similar treatments in an Ar environment do no show this effect, confirming that oxidation is the main role in the structural change. Statistical analysis of grain boundary (GB) angles shows dominant mirror formation. Electrical biasing across the GB is shown to lead to changes at the GB and their observation under an optical microscope. Our approach enables high-throughput screening of as-synthesized WS2 domains and continuous films to determine their crystallinity and should enable improvements in future CVD growth of these materials.

http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b00852

Controlled Preferential Oxidation of Grain Boundaries in Monolayer Tungsten Disulfide for Direct Optical Imaging

Additive manufacturing has provided a pathway for inexpensive and flexible manufacturing of specialized components and one-off parts. At the nanoscale, such techniques are less ubiquitous. Manufacturing at the nanoscale is dominated by lithography tools that are too expensive for small- and medium-sized enterprises (SMEs) to invest in. Additive nanomanufacturing (ANM) empowers smaller facilities to design, create, and manufacture on their own while providing a wider material selection and flexible design. This is especially important as nanomanufacturing thus far is largely constrained to 2-dimensional patterning techniques and being able to manufacture in 3-dimensions could open up new concepts. In this review, we outline the state-of-the-art within ANM technologies such as electrohydrodynamic jet printing, dip-pen lithography, direct laser writing, and several single particle placement methods such as optical tweezers and electrokinetic nanomanipulation. The ANM technologies are compared in terms of deposition speed, resolution, and material selection and finally the future prospects of ANM are discussed. This review is up-to-date until April 2014.

/pdf/additive-nanomanufacturing-a-review-3qw7ar0un4.pdf

Additive nanomanufacturing – A review

Electrochemical behavior of rigid carbon nanotube composite electrodes

Growing monolayer MoS2 films that are continuous with large domain sizes by chemical vapor deposition is one of the major challenges in 2D materials research at the moment. Here, we explore how atmospheric pressure CVD can be used to grow centimeter scale continuous films of monolayer MoS2 films directly on Si substrates with an oxide layer whilst also obtaining large domain sizes exceeding 20 μm within the films. This is achieved by orientating the growth substrate in a vertical position to improve the uniformity of precursor feed-stock compared to horizontally orientated growth substrates. This leads to continuous films of monolayer MoS2 over a significantly larger area without the need for low-pressure vacuum systems or volatile precursors. This provides important insights into novel approaches for maximizing domain sizes within MoS2 films, with concomitant large area uniform coverage.

https://iopscience.iop.org/article/10.1088/0957-4484/27/8/085604/pdf

Mercè Pacios

Papers

Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition

Controlled Preferential Oxidation of Grain Boundaries in Monolayer Tungsten Disulfide for Direct Optical Imaging

Additive nanomanufacturing – A review

Electrochemical behavior of rigid carbon nanotube composite electrodes

Substrate control for large area continuous films of monolayer MoS2 by atmospheric pressure chemical vapor deposition.