Field effect transistors (FETs) based on individual GaN nanowires (NWs) have been fabricated. Gate-dependent electrical transport measurements show that the GaN NWs are n-type and that the conductance of NW−FETs can be modulated by more than 3 orders of magnitude. Electron mobilities determined for the GaN NW FETs, which were estimated from the transconductance, were as high as 650 cm2/V·s. These mobilities are comparable to or larger than thin film materials with similar carrier concentration and thus demonstrate the high quality of these NW building blocks and their potential for nanoscale electronics. In addition, p−n junctions have been assembled in high yield from p-type Si, and these n-type GaN NWs and their potential applications are discussed.

/pdf/gallium-nitride-nanowire-nanodevices-4db8i3xqbj.pdf

Gallium Nitride Nanowire Nanodevices

Xiangfeng Duan and Charles M. Lieber*Department of Chemistry and Chemical BiologyHarVard UniVersity, Cambridge, Massachusetts 02138ReceiVed October 18, 1999Herein we report the bulk synthesis of single crystalline GaNnanowires. Laser ablation of a composite target of GaN and acatalytic metal generates liquid nanoclusters that serve as reactivesites confining and directing the growth of crystalline nanowires.Field emission scanning electron microscopy (FE-SEM) showsthat the product primarily consists of wire-like structures. PowderX-ray diffraction (PXRD) analyses of a bulk nanowire samplecan be indexed to the GaN wurtzite structure, and indicate >95%phase purity. Transmission electron microscopy (TEM), conver-gent beam electron diffraction (CBED), and energy-dispersiveX-ray fluorescence (EDX) analyses of individual nanowires showthat they are GaN single crystals with a [100] growth direction.Nanostructured GaN materials have attracted extensive interestover the past decade due to their significant potential foroptoelectronics.

https://cml.harvard.edu/assets/JACS_122_188.pdf

Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires

Nanoporous metal foams (NMFs) have been a long sought-after class of materials in the quest for high-surface-area conductive and catalytic materials. Herein we present an overview of newly developed synthetic strategies for producing NMFs along with an in-depth discussion of combustion synthesis as a versatile and scalable approach for the preparation of nanoporous, nanostructured metal foams. Current applications of NMFs prepared using combustion synthesis are also presented including hydrogen storage and catalysis.

Nanoporous metal foams.

Synthesis forms a vital aspect of the science of nanomaterials. In this context, chemical methods have proved to be more effective and versatile than physical methods and have therefore, been employed widely to synthesize a variety of nanomaterials, including zero-dimensional nanocrystals, one-dimensional nanowires and nanotubes as well as two-dimensional nanofilms and nanowalls. Chemical synthesis of inorganic nanomaterials has been pursued vigorously in the last few years and in this article we provide a perspective on the present status of the subject. The article includes a discussion of nanocrystals and nanowires of metals, oxides, chalcogenides and pnictides. In addition, inorganic nanotubes and nanowalls have been reviewed. Some aspects of core–shell particles, oriented attachment and the use of liquid–liquid interfaces are also presented.

https://www.bibalex.org/CSSP/papers/Attachments/Dalton_review.pdf

Synthesis of inorganic nanomaterials

Precursor Chemistry for Main Group Elements in Semiconducting Materials

Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals

High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R3N)Ga(N3)3 (R=CH3, C2H5, etc.). The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, IR, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m2 · g−1. © 1998 John Wiley & Sons, Ltd.

Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

High quality nanoscale, phase-pure hexagonal gallium nitride crystallites have been synthesized by using the thermally induced explosion of the molecular precursor (Et 3 N)Ga(N 3 ) 3 . The method allows the control of the particle size from 2 to 24 nm. X-ray diffraction and Rietveld simulations revealed a platelet-like shape of the larger particles in contrast to the rather spherical smaller crystallites. An increasing blue shift of the high energy luminescence with decreasing crystallite size was found (up to 4.4 cV at 5 K).

Michael Giersig

Papers

Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals

Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides

Nanoscale Hexagonal Gallium Nitride from Single Molecule Precursors: Microstructure and Crystallite Size Dependent Photoluminescence

Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals.