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Michael Nelson

Researcher at University of California, Los Angeles

Publications -  5
Citations -  409

Michael Nelson is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Finite element method & Maxillary central incisor. The author has an hindex of 5, co-authored 5 publications receiving 388 citations.

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Proceedings ArticleDOI

Hardware Trojan horse detection using gate-level characterization

TL;DR: A technique for recovery of characteristics of gates in terms of leakage current, switching power, and delay is introduced, which utilizes linear programming to solve a system of equations created using nondestructive measurements of power or delays to detect embedded HTHs.
Journal ArticleDOI

Maxillary expansion in customized finite element method models.

TL;DR: This efficient and customized FEM model can be used to predict craniofacial responses to biomechanics in patients and to evaluate the effects of transverse expansion on the status of various midpalatal sutures.
Book ChapterDOI

SVD-Based Ghost Circuitry Detection

TL;DR: A singular value decomposition (SVD)-based technique for gate characteristic recovery is applied to solve a system of equations created using fast and non-destructive measurements of leakage power and/or delay, then combined with statistical constraint manipulation techniques to detect embedded ghost circuitry.
Journal ArticleDOI

Glutathione-Dependent Thyroxine 5′-Monodeiodination Modulates Growth Hormone Production by Cultured Nonthyrotropic Rat Pituitary Cells*

TL;DR: When intact cells were incubated overnight with intracellular GSH-depleting agents (diethylmaleate or diamide), the 5′-monodeiodination of T4 was abolished and showed the thiol dependence of the reaction.
Journal ArticleDOI

Gate Characterization Using Singular Value Decomposition: Foundations and Applications

TL;DR: A singular value decomposition (SVD)-based procedure for gate-level characterization (GLC) that calculates changes in properties, such as delay and switching power of each gate of an IC, accounting for process variation and device aging.