다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

0038-1101/$ see front matter 2013 Elsevier Ltd. All rights reserved. http://dx.doi.org/10.1016/j.sse.2013.07.002 DOI of original article: http://dx.doi.org/10.1016/j.sse.2010.05.027 ⇑ Corresponding author. Current address: Material Science and Engineering, Northwestern University, IL 60208, United States. E-mail address: v-sangwan@northwestern.edu (V.K. Sangwan). V.K. Sangwan a,b,⇑, V.W. Ballarotto , D.R. Hines , M.S. Fuhrer , E.D. Williams a,b Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD, United States b Laboratory for Physical Science, College Park, MD, United States

Corrigendum to “Controlled growth, patterning and placement of carbon nanotube thin films” [Solid-State Electron. 54 (2010) 1204–1210]

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Minimum conductivity and charge inhomogeneity in Bi$_{2}$Se$_{3}$ in the topological regime

We have measured the electrical transport properties of mats of single-walled carbon nanotubes (SWNT) as a function of applied electric and magnetic fields. We find that at low temperatures the resistance as a function of temperature R(T) follows the Mott variable range hopping (VRH) formula for hopping in three dimensions. Measurement of the electric field dependence of the resistance R(E) allows for the determination of the Bohr radius of a localized state a≈650 nm. The magnetoresistance (MR) of SWNT mat samples is large and negative at all temperatures and fields studied, and can be qualitatively described by theories of MR for VRH systems. The Hall coefficient RH is positive and nearly temperature-independent. The sign of RH agrees with the sign of the thermopower. The small magnitude of RH suggests a large carrier density, but may be the result of cancellation of electron and hole terms.

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Transport and localization in single-walled carbon nanotubes

Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm2 in the maximum. Moreover, we reveal the IL-phase-dependent transport characteristics, including the channel current, carrier mobility, and density, substantiating the self-gating at the InSe/IL interface. The dominance of self-gating in the rubber phase is attributed to the correlation between the intra- and intersystem Coulomb interactions, further confirmed by Raman spectroscopy. This study provides insights into the capacitive coupling at the InSe/IL interface, paving the way to developing liquid/2D material hybrid devices.

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors.

We have synthesized single crystals of isotopically enriched Rb 3 C 60 . The very sharp superconducting transitions in single crystal superconducting fullerides allow us to determine the isotope effect on the superconducting transition temperature, T c , with unprecedented accuracy. We find that the carbon isotope shift exponent α carbon for 99% 13 C. This coupled with near-zero significantly smaller than other values reported in the literature 1–6 . This, coupled with the near-zero rubidium isotope effect reported by B. Burk et. al. 7 , should place considerable constraints on any theoretical model of superconductivity in the alkali fullerides.

Michael S. Fuhrer

Papers

Corrigendum to “Controlled growth, patterning and placement of carbon nanotube thin films” [Solid-State Electron. 54 (2010) 1204–1210]

Minimum conductivity and charge inhomogeneity in Bi$_{2}$Se$_{3}$ in the topological regime

Transport and localization in single-walled carbon nanotubes

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors.

Carbon isotope effect in single-crystal Rb3C60