다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

With the continuing miniaturization of semiconductor microelectronics, atomically thin materials are emerging as promising candidate materials for future ultrascale electronics. In particular, the layered transition metal dichalcogenides (TMDs) have attracted a significant amount of attention because of the variety of their electronic properties, depending on the type of transition metal and its coordination within the crystal. Here, we use low-temperature scanning tunneling microscopy (STM) for the structural and electronic phase engineering of the group V TMD niobium diselenide (NbSe2). By applying voltage pulses with an STM tip, we can transform the material crystal phase locally from trigonal prismatic (2H) to octahedral (1T), as confirmed by the concomitant emergence of a characteristic (√13 × √13)R13.9° charge density wave (CDW) order. At 77 K, atomic-resolution STM images of the junction with sublattice detail confirm the successful phase engineering of the material, as we resolve the difference in...

Nanoscale Phase Engineering of Niobium Diselenide

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.

Topological insulator quantum dot with tunable barriers

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Read-heads based on the manipulation of spin have already revolutionized the performance of magnetic data storage devices. The development of more-complex spin-devices using carbon nanotubes could enable the next logical step in spintronics.

Spintronics: A path to spin logic

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Michael S. Fuhrer

Papers

Nanoscale Phase Engineering of Niobium Diselenide

Topological insulator quantum dot with tunable barriers

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Spintronics: A path to spin logic

The positive piezoconductive effect in graphene