M
Michael W. Dennen
Researcher at Research Triangle Park
Publications - 10
Citations - 276
Michael W. Dennen is an academic researcher from Research Triangle Park. The author has contributed to research in topics: Field-effect transistor & Drain-induced barrier lowering. The author has an hindex of 10, co-authored 10 publications receiving 276 citations.
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Patent
Method of fabricating field effect transistor having polycrystalline silicon gate junction
TL;DR: In this paper, a polycrystalline silicon gate including the semiconductor junction is formed by implanting ions into the top of the polycrystaline gate simultaneous with implantation of the source and drain regions.
Patent
Trench gate fermi-threshold field effect transistors
TL;DR: In this article, a tub region of second conductivity was constructed at the surface of a semiconductor substrate of first conductivity type and an insulated gate electrode was formed in the trench.
Patent
Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
TL;DR: In this article, a Fermi-FET includes a drain extension region of the same conductivity type as the drain region and a drain pocket implant region of opposite conductivities type from drain region.
Patent
Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
TL;DR: In this article, a drain field termination region between the source and drain regions is represented by a buried counter-doped layer, extending beneath the substrate surface from the source region to the drain region.
Patent
Field effect transistor having polycrystalline silicon gate junction
TL;DR: In this paper, a polycrystalline silicon gate including the semiconductor junction is formed by implanting ions into the top of the polycrystaline gate simultaneous with implantation of the source and drain regions.