Patent
Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
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TLDR
In this article, a Fermi-FET includes a drain extension region of the same conductivity type as the drain region and a drain pocket implant region of opposite conductivities type from drain region.Abstract:
A Fermi-FET, including but not limited to a tub-FET, a contoured-tub Fermi-FET or a short channel Fermi-FET includes a drain extension region of the same conductivity type as the drain region and a drain pocket implant region of opposite conductivity type from the drain region The drain pocket implant region acts as a drain field stop to reduce or prevent drain-to-source field reach-through Reduced low drain field threshold voltage, significantly reduced drain induced barrier lowering and reduced threshold dependence on channel length may be obtained, resulting in higher performance in short channelsread more
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References
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Method of making semiconductor devices
David Phythian Robinson,Julian Robert Anthony Beale,John Martin Shannon,John Anthony Kerr,Mukunda Behari Das +4 more
TL;DR: In this article, a method for making an IGFET is described, which utilizes impurity ion implantation into the surface channel to determine the conductivity of the IC's surface channel.
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Fermi threshold field effect transistor
TL;DR: In this paper, the authors proposed a Fermi threshold FET with a threshold voltage that is independent of oxide thickness, channel length, drain voltage, and substrate doping, which can be manufactured using relaxed ground-rules to provide low cost, high yield devices.
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