M
Mickael Martin
Researcher at University of Grenoble
Publications - 97
Citations - 1471
Mickael Martin is an academic researcher from University of Grenoble. The author has contributed to research in topics: Silicon & Medicine. The author has an hindex of 20, co-authored 80 publications receiving 1206 citations. Previous affiliations of Mickael Martin include Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Large InSe monocrystals grown from a non-stoichiometric melt
A. Chevy,A. Kuhn,Mickael Martin +2 more
TL;DR: In this paper, large monocrystals of the peritectic InSe were grown from an In1.12Se0.88 melt by the Bridgman method, with a diameter of 14 mm and a length of 30 mm.
Journal ArticleDOI
Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.
Siming Chen,Mengya Liao,Mingchu Tang,Jiang Wu,Mickael Martin,Thierry Baron,Alwyn J. Seeds,Huiyun Liu +7 more
TL;DR: The first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers are reported on.
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Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility
R. Alcotte,Mickael Martin,J. Moeyaert,R. Cipro,Sylvain David,Franck Bassani,F. Ducroquet,Y. Bogumilowicz,Errol Antonio C. Sanchez,Z. Ye,Xinyu Bao,J. B. Pin,Thierry Baron +12 more
TL;DR: In this paper, metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied, and APB-free epitaxial GaAs films as thin as 150 nm were obtained, showing an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5.
Journal ArticleDOI
Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists
E. Pargon,K. Menguelti,Mickael Martin,A. Bazin,O. Chaix-Pluchery,Claire Sourd,S. Derrough,Thorsten Lill,Olivier Joubert +8 more
TL;DR: In this article, the role of the plasma vacuum ultraviolet (VUV) light on resist modifications is clearly outlined and distinguished from the roles of radicals and ions from the plasma, while the synergistic effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm).
Journal ArticleDOI
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon
Mengya Liao,Siming Chen,Suguo Huo,Si Chen,Jiang Wu,Mingchu Tang,Kenneth Kennedy,Wei Li,Saurabh Kumar,Mickael Martin,Thierry Baron,Chao-Yuan Jin,Ian M. Ross,Alwyn J. Seeds,Huiyun Liu +14 more
TL;DR: In this paper, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD laser was fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers.