Literature on electroless Ni-P deposition, in recent decades, has dwelled primarily on surface engineering and corrosion-resistant applications. By contrast, we have many research articles devoted to the engineering aspects of the electroless Ni-P depositions and their technology. The present article deals with the development of electroless Ni-P bath, advantages and mechanisms of deposition, and applications of the Ni-P deposits. We also present a comparison of the properties of electroless Ni-P and Ni-B as well as the recent developments in nickel-phosphorous research. We attempt to review these in a detailed manner. We also briefly discuss the future developments of electroless Ni-P.

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An overall aspect of electroless Ni-P depositions—A review article

: The design of high-speed integrated circuits and systems is often constrained by thermal considerations. As late as 1981 it was authoritatively predicted that the maximum achievable power flux for liquid-cooled, densely-packed integrated circuits (ICs) would be about 20 W/sq cm. Convective heat-transfer theory indicates that well over 1000 W/sq cm can be compactly removed from ICs at normal operating temperatures, provided microscopic (e.g., 50-microns wide) extended-surface structures are used. The difficulty of constructing high-conductance, low-stress thermal interfaces between ICs and heat sinks suggests the use of an integral heat sink. Accordingly, IC microfabrication techniques were employed to design, fabricate, and test novel, ultracompact water-cooled, laminar-flow, optimized plate-fin and pin-fin heat sinks directly within standard-thickness silicon substrates. Worst-case thermal resistances as low as 0.083 deg C/W were measured from 1-sq cm thin-film resistors (e.g., a 108 deg C temperature rise at 1309 W), in good agreement with predictions. Further increases in heat transfer are achievable. The use of integral liquid-cooled heat sinks in multichip systems presents potential yield, reliability, cost and packaging problems. Attachment of unmodified ICs to micro-heat sinks seems a more attractive approach. A novel die-attachment technique has been developed which avoids the problems of conventional attachments. In this technique, a liquid partially fills an array of micron-wide repentant capillaries in the heat sink substrate, so that surface tension holds the polished back of an IC in intimate thermal contact with the heat sink. The bond is void-free, virtually stress-free, long-lived, and allows repeated detachment and replacement of ICs without damaging the heat sink substrate. The repentant grooves were fabricated by a novel process using electroless plating of nickel onto vertical silicon microgrooves.

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Heat-transfer microstructures for integrated circuits

The metal sulfides exhibit a great diversity of electrical and magnetic properties with both scientific interest and practical applications. These properties apply major constraints on models of the electronic structure (or chemical bonding) in sulfides (Vaughan and Rosso 2006, this volume). The pure and doped synthetic equivalents of certain sulfide minerals have actual or potential applications in the electronics industries (optical devices, photovoltaics, photodiodes and magnetic recording devices). Sulfides are also components of many thin film devices and have been extensively investigated as part of the nanotechnology revolution. Certain electrical and magnetic properties of sulfide minerals mean they contribute to geomagnetism and paleo-magnetism, and provide the geophysical prospector with exploration tools for metalliferous ore deposits. To the mineral technologist, these same properties provide methods for the separation of the metal-bearing sulfides from associated waste minerals after mining and milling and before extraction of the metal by pyrometallurgical or hydrometallurgical treatment.

In this chapter, the theory and measurement of electrical and magnetic properties are outlined along with spectroscopic and diffraction studies that can provide insights into magnetic behavior are discussed. A brief review of electrical and magnetic studies of major sulfide minerals includes some examples of the applications of sulfide electrical and magnetic properties, including special consideration of the properties of sulfide nanoparticles. Most of the available data presented are for pure synthetic binary and ternary sulfides, as very small concentrations of impurities can dramatically affect electrical properties leading to problems of interpreting data from natural samples. Although data for several of the commonly found sulfides are discussed in this chapter, no attempt is made at a comprehensive coverage.

The section below on theory and measurement of electrical and magnetic properties draws on the account given in Vaughan and Craig (1978) to which readers are referred for further details. It …

Electrical and magnetic properties of sulfides

The current transport mechanism in an MIS-tunnel diode has been studied by considering both the process of tunneling and the effect of pinholes in the insulating layer. It has been shown that in order to explain the experimental J - V characteristics of MIS-diodes, presence of a thin interfacial layer of thickness δ p within the pinholes should be considered. From an analysis of the tJ - V and C - V characteristics, a method has been suggested for the estimation of the value of δ p . The values of interface trap density and barrier height for the MOS-part of the diodes are also calculated. The dependence of barrier height on oxide thickness for the diodes is found to obey the barrier height model of Cowley and Sze.

Miles V. Sullivan

Papers

Electroless Nickel Plating for Making Ohmic Contacts to Silicon

Five Metal Hydrides as Alloying Agents on Silicon

Iron Oxide See‐Through Photomasks

Method of treating the surface of solids with liquids

Materials for Use in a Durable Selectively Semitransparent Photomask