Showing papers in "Journal of The Electrochemical Society in 1973"
1,089 citations
TL;DR: In this article, the conduction characteristics of polycrystalline lithium iodide containing aluminum oxide were studied and it was found that the incorporation of aluminum oxide substantially increased the conductivity of lithium ionide.
Abstract: The conduction characteristics of the polycrystalline lithium iodide containing aluminum oxide were studied. It was found that the incorporation of aluminum oxide substantially increased the conductivity of lithium iodide. Lithium iodide containing 33–45 mole per cent (m/o) aluminum oxide exhibited conductivities in the order of 10−5 ohm−1 cm−1 at 25° ± 2°C. Inasmuch as no substantial amount of aluminum oxide was found soluble in the lithium iodide under the experimental conditions, the increase in conductivity could not be explained by the classical doping mechanism. The electronic conductivity of the lithium iodide‐aluminum oxide solid was negligible compared to the ionic conductivity. Therefore, it is suitable as a solid electrolyte in solid‐state battery systems.
826 citations
TL;DR: In this article, the optical properties of silicon nitride layers formed by the pyrolysis of a mixture of and are presented together with published data for materials to formulate a bonding model for and which quantitatively describes their optical characteristics.
Abstract: The optical properties of silicon nitride layers formed by the pyrolysis of a mixture of and are presented. These results are used together with published data for materials to formulate a bonding model for and which quantitatively describes their optical characteristics. The basic units of this structure are Si tetrahedra of the type in which the distribution of atoms for all possible is statistical for any given atom ratio.
362 citations
TL;DR: In this article, the concentration of nitrogen and oxygen in semiconductor silicon and their solubilities in silicon at its melting point have been measured by charged particle activation analysis and infrared spectrophotometry.
Abstract: The concentration of nitrogen and oxygen in semiconductor silicon and their solubilities in silicon at its melting point have been measured by charged particle activation analysis and infrared spectrophotometry. It has been found that: (i) commercial semiconductor silicon contains less than of nitrogen in the un‐ionized state; (ii) the solubility in solid silicon is for nitrogen and for oxygen; and (iii) the solubility in liquid silicon is about for nitrogen and for oxygen. Thus, the equilibrium distribution coefficient has been determined to be about for nitrogen and for oxygen. The solubilities of the two elements are compared with those of other elements, especially carbon, and are discussed thermochemically.
225 citations
TL;DR: In this paper, it was shown that from the energy spectra of He ions backscattered from aluminum, recorded before and after anodic oxidation, the thickness of the oxide films and the positions of ion-implanted foreign atoms within the films can be determined.
Abstract: It is shown that from the energy spectra of He ions backscattered from aluminum, recorded before and after anodic oxidation, the thickness of the oxide films and the positions of ion‐implanted foreign atoms within the films can be determined. Information on the composition and uniformity of the films is also obtained. The scope, limitations, and precision of the method are predictable and are discussed. As model experiments the behavior of ion‐implanted noble gases was studied. The results agree with previous work and can be interpreted to show that, as expected, both aluminum and oxygen are mobile during the oxidation. The behavior of ion‐implanted alkali metals and halogens was also studied. These species were found to be mobile during oxidation and behaved in a manner consistent with their expected ionic charges.
224 citations
TL;DR: In this paper, the anodic dissolution of copper in chloride solutions was studied under laboratory conditions up to 101°C and up to 175°C in a specially designed cell that could be flanged into a pump loop.
Abstract: The anodic dissolution of copper in chloride solutions was studied under laboratory conditions up to 101°C and up to 175°C in a specially designed cell that could be flanged into a pump loop. Under all conditions the anodic polarization curves demonstrated Tafel behavior with slopes equal to 2.3 RT/F. The anodic process was under diffusion control with the primary dissolution product being ; no evidence of solid corrosion products was found at the highest current densities employed. The anodic process was independent of pH and between 0.124 to 1.24M Cl− depended on the square of the chloride ion concentration. Loop experiments showed that under fixed conditions the current density was proportional to the 0.8 power of flow velocity. A simple kinetic expression based on the Nernst equation and Fick's first law was derived which was in excellent agreement with the experimental results.
190 citations
172 citations
TL;DR: The behavior of corrosion layers on Pb in solutions is shown to resemble that of perm-selective precipitation membranes, prepared by interdiffusion of Pb+2 ions and ions into cellophane foil as mentioned in this paper.
Abstract: The behavior of corrosion layers on Pb in solutions is shown to resemble that of perm‐selective precipitation membranes, prepared by interdiffusion of Pb+2 ions and ions into cellophane foil. Diffusion potentials in these precipitation membranes follow, over a wide pH‐range, the equation and can reach values of several hundred mV. The lower limit of that electrode potential range where (and/or ) forms in the interior of the corrosion film, underneath a perm‐selective layer, that is, −0.4V (or +0.5V) vs. , can be predicted theoretically in a proper manner by taking into account the diffusion potential in the film.
157 citations
TL;DR: In this article, the efficiency of Mn(IV) luminescence in fluorine coordination is discussed in the context of the chemical bonding in the center of a fluorine molecule.
Abstract: The efficiency of Mn(IV) luminescence in fluorine coordination is discussed in the context of the chemical bonding in the center. It is possible that the lower degree of σ‐antibonding in the orbitals, and the greater degree of π‐antibonding in the orbitals, compared with the effect observed in oxides, contributes to a high efficiency and quenching temperature of the emission. The excitation and emission spectra of Mn(IV) in , , and are presented and compared.
153 citations
143 citations
TL;DR: In this article, the electrical conductivity of sintered specimens of was measured over the temperature range 700°-1500°C and from 1 to 10−22 atm of oxygen.
Abstract: The electrical conductivity of sintered specimens of was measured over the temperature range 700°–1500°C and from 1 to 10−22 atm of oxygen. All specimens of exhibited mixed conduction. Two limiting case regions were observed. At low temperatures and high oxygen pressures, the conductivity is predominantly ionic. In this region the conductivity is independent of and between approximately 1 and 8 m/o is proportional to mole per cent . The following equation for ionic conductivity was obtained by fitting the conductivity data in this region to an expression derived on the basis of an oxygen vacancy model. An approximate expression for the diffusion coefficient for oxygen vacancies was calculated from the above expression and the Nernst‐Einstein relation. At high temperatures and low oxygen partial pressures and for lower contents the conductivity is predominantly electronic. In this region the magnitude and dependence of σ is similar to "pure" . A thermodynamic argument is also presented which favors oxygen vacancies as the nonstoichiometric defect in both pure and .
TL;DR: In this article, it was shown that in the presence of catalyst poisons such as acetonitrile or mercury, the currents for formic acid oxidation, measured in the potential range +0.4 to + 0.8V E(H) at Pt can be substantially increased.
Abstract: : In the presence of catalyst poisons such as acetonitrile or mercury, it is shown that the currents for formic acid oxidation, measured in the potential range +0.4 to +0.8V E(H) at Pt can be substantially increased. The effect is shown to originate from blocking of the surface at less positive potentials mainly in the H adsorption/desorption region where an inhibitor for the main formic acid oxidation reaction is normally formed in the absence of additive. Under the latter conditions, steady-state oxidation currents are normally small and decrease with time due to build-up of an inhibiting species from the HCOOH or intermediates involved in its oxidation. The competitive effects of Hg and CH3CN are different insofar as a given extent of surface blocking causes different effects on the formic acid oxidation current. Comparative experiments on the effect of CH3CN on methanol oxidation are described. (Modified author abstract)
TL;DR: In this article, the relative magnitude of metal and oxygen migrations can be determined using markers, and the possible results are reviewed for the ideal case of a homogeneous oxide grown to uniform thickness on a plane metal surface.
Abstract: An oxide film on a metal surface will thicken only if metal, or oxygen, or both, migrate across it. The relative magnitude of the metal and oxygen migrations can be determined using markers, and the possible results are reviewed for the ideal case of a homogeneous oxide grown to uniform thickness on a plane metal surface. Such experiments require markers that are both inert and immobile; criteria are developed to establish that these requirements have been met. Experimentally, it has been shown that the anodic oxidation of tantalum is a system close to the ideal, and that the radioisotope of a noble gas is a good approximation for the required marker. Radioactive noble gases were implanted by means of a mass separator into thin films of anodic tantalum oxide, and the transport numbers of the tantalum and oxygen measured after thickening by further anodization. The transport numbers were found to be 0.243 and 0.757, respectively, for anodizing conditions of . The noble gas concentration profiles were observed to broaden on further anodizing, and this was interpreted as being due to the simultaneous movement of tantalum and oxygen atoms during the charge transfer event.
TL;DR: In this article, a new high ionic conductivity solid Ag/sub 6/I/sub 4/WO/Sub 4/AgI-Ag/sub 2 WO/sub 3 4/4/I /sub 2/I 0.047 (ohm.cm)/sup -1/ at 25/sup 0/C and an activation energy for conduction of 3.6 KCaL/mole between 20/Sup 0/ and 293/sup 1/C.
Abstract: A new high ionic conductivity solid Ag/sub 6/I/sub 4/WO/sub 4/ has been found in the system AgI-Ag/sub 2/WO/sub 4/ at ambient temperature. This compound has a silver ion conductivity of 0.047 (ohm.cm)/sup -1/ at 25/sup 0/C and an activation energy for conduction of 3.6 KCaL/mole between 20/sup 0/ and 293/sup 0/C. The transport number measurement using Tubandt's method shows that the transport number of silver ions in this compound is 1.00 within the experiment error. An Ag/Ag/sub 6/I/sub 4/WO/sub 4//I/sub 2/ solid-electrolyte cell shows an open-circuit voltage of 637 MV which agrees well with the value of 686.7 MV calculated from deltag degrees of the cell reaction at 21/sup 0/C. Characteristics of the solid-state cells using Ag/sup 6/I/sub 4/WO/sub 4/ as the electrolyte have been investigated. The phase diagram of the system AgI-Ag/sub 2/WO/sub 4/ has been determined also. 14 references.
TL;DR: In this paper, a simple model for current conduction in polycrystalline silicon is described based on grain size, grain doping, and effective barrier height due to the grain boundary, which satisfactorily explains the observed temperature dependence of the resistivity of undoped films and also the large values of resistivity which are observed for dopant concentrations.
Abstract: Polycrystalline silicon is deposited by pyrolysis of silane in an rf heated epitaxial reactor. The grains exhibit a fibrous microstructure having an 〈110〉 preferred orientation in the growth direction. Growth is inhibited in the presence of excess arsine and accelerated in the presence of diborane. The results are explained in terms of catalysis and poisoning of surface adsorption sites responsible for reaction. A simple model for current conduction in polycrystalline silicon is described based on grain size, grain doping, and effective barrier height due to the grain boundary. This model satisfactorily explains the observed temperature dependence of the resistivity of undoped films and also the large values of resistivity which are observed for dopant concentrations .
TL;DR: In this paper, the authors found that the minimum values of resistivity of doped polycrystalline silicon can be explained in terms of solid solubility and carrier mobility at deposition temperatures below 700 °C with and without addition of dopants.
Abstract: The deposition rate of polycrystalline silicon from a mixture is significantly influenced by the addition of , ,and . At a deposition temperature of 680 °C causes a decrease by a factor of 7, causes a decrease by a factor of 2.5, while a two times higher deposition rate is obtained with addition. Out of these three dopant hydrides and do not affect the activation energy of the deposition reaction compared to undoped growth (37 kcal/mole). The Arrhenius plot for the deposition of silicon from a mixture shows two activation energies: 20 kcal/mole at and 7 kcal/mole below 620°C. The experimentally found minimum values of the resistivity of doped polycrystalline silicon can be explained in terms of solid solubility and carrier mobility. At deposition temperatures below 700 °C with and without addition of dopants the polycrystalline silicon surface is mirror‐like. Significant differences have, however, been observed by electron microscopy. Compared to undoped growth boron was found to lower the etch rate of the polycrystalline silicon film markedly.
TL;DR: In this paper, the conditions for electroless nickel-boron plating, the process mechanism, and the structure of the alloys asplated and after annealing at 150°-700°C were investigated.
Abstract: The conditions for electroless nickel‐boron plating, the process mechanism, and the structure of the alloys as‐plated and after annealing at 150°–700°C were investigated. A correlation of the mechanical and magnetic properties with the changes of phase structure was established.
TL;DR: In this paper, a trifluorophosphine complex is used to produce adherent bright films of crystals on a variety of substrates at 200°-300°C in 1 atm hydrogen.
Abstract: Chemical vapor deposition of platinum for microelectronic applications has been studied with the aim of avoiding the radiation damage to dielectrics caused by sputter or e‐gun deposition. Two known CVD methods—the pyrolysis of Pt acetylacetonate and the reduction of —were tried and judged unsatisfactory for either purity or adherence. A novel method of Pt deposition using the trifluorophosphine complex is reported. The process is simple and reliable, and produces adherent bright films of crystals on a variety of substrates at 200°–300°C in 1 atm hydrogen. The Pt contains small amounts of residual phosphorus, mostly concentrated at the surface. Resistivity of 750Aa films is 1.8 times that of bulk Pt. MOS capacitors with CVD Pt field plates on both and alone have shown good stability under bias‐temperature aging. CVD Pt and Si interdiffuse readily to form ohmic or Schottky diode contacts.
TL;DR: Mittels der Kernreaktionen 1°C O(d, p)"Ound ′8O(P, oz)′5N werden Wachstumsmechanismus, Auflosung und Transport bei der Bildung relativ dunner ( 7000 poroser anodischer Oxidschichten auf Al untersucht) as mentioned in this paper.
Abstract: Mittels der Kernreaktionen 1°C O(d, p)"Ound ′8O(P, oz)′5N werden Wachstumsmechanismus, Auflosung und Transport bei der Bildung relativ dunner ( 7000 poroser anodischer Oxidschichten auf Al untersucht.
TL;DR: In this paper, it was found that the solid solubility of Ce3+ in varies with the atmosphere during firing, and that only 2 mole per cent (m/o) of C3+ can be dissolved in the yttrium aluminum garnet in air while almost 6% of C 3+ enters the garnet lattice when fired at 1450°C under a hydrogen atmosphere.
Abstract: The systems , , and were studied. It was found that the solid solubility of Ce3+ in varies with the atmosphere during firing. Only 2 mole per cent (m/o) of Ce3+ can be dissolved in the yttrium aluminum garnet in air while almost 6% Ce3+ enters the garnet lattice when fired at 1450°C under a hydrogen atmosphere. Complete solid solutions were observed in the systems and . The cathodoluminescence emission‐peak position of the Ce3+ ion in host shifted to a longer wavelength while the latttice parameter of the solid solution expanded when Gd3+ ions were substituted for Y3+. On the other hand, the emission‐peak position shifted to a shorter wavelength when the garnet host contained Ga3+ ions in the Al3+ position. The lattice parameter of the solid solution increased with Ga concentration.