M
Moon-Hyung Jang
Researcher at Yonsei University
Publications - 55
Citations - 1355
Moon-Hyung Jang is an academic researcher from Yonsei University. The author has contributed to research in topics: Thin film & Extended X-ray absorption fine structure. The author has an hindex of 15, co-authored 52 publications receiving 995 citations. Previous affiliations of Moon-Hyung Jang include University of Virginia & University of Massachusetts Amherst.
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Journal ArticleDOI
Anatomy of Ag/Hafnia-Based Selectors with 10 10 Nonlinearity
Rivu Midya,Zhongrui Wang,Jiaming Zhang,Sergey Savel'ev,Can Li,Mingyi Rao,Moon-Hyung Jang,Saumil Joshi,Hao Jiang,Peng Lin,Kate J. Norris,Ning Ge,Qing Wu,Mark Barnell,Zhiyong Li,Huolin L. Xin,R. Stanley Williams,Qiangfei Xia,Jianhua Yang +18 more
TL;DR: High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.
Journal ArticleDOI
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.
Hao Jiang,Lili Han,Lili Han,Peng Lin,Zhongrui Wang,Moon-Hyung Jang,Qing Wu,Mark Barnell,Jianhua Yang,Huolin L. Xin,Qiangfei Xia +10 more
TL;DR: A Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention, and directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO1 layer that is responsible for the switching.
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Three-dimensional crossbar arrays of self-rectifying Si/SiO 2 /Si memristors
Can Li,Lili Han,Lili Han,Lili Han,Hao Jiang,Moon-Hyung Jang,Peng Lin,Qing Wu,Mark Barnell,Jianhua Yang,Huolin L. Xin,Qiangfei Xia +11 more
TL;DR: A fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays, and exhibits repeatable unipolar resistance switching behaviour and excellent retention at 300 °C is demonstrated.
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Observing Oxygen Vacancy Driven Electroforming in Pt-TiO2-Pt Device via Strong Metal Support Interaction.
Moon-Hyung Jang,Rahul Agarwal,Pavan Nukala,Dooho Choi,A. T. Charlie Johnson,I-Wei Chen,Ritesh Agarwal +6 more
TL;DR: SMSI, which originates from the d-orbital overlap between Pt atom and the reduced cation of the insulating oxide in the vicinity of oxygen vacancies, was optimized by fabricating nanoscale devices causing Pt atom migration tracking the moving oxygen vacancy front from the anode to cathode during electroforming.
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Direct observation of metal-insulator transition in single-crystalline germanium telluride nanowire memory devices prior to amorphization
Pavan Nukala,Rahul Agarwal,Xiaofeng Qian,Moon-Hyung Jang,Sajal Dhara,Karthik Kumar,A. T. Charlie Johnson,Ju Li,Ritesh Agarwal +8 more
TL;DR: It is shown that the application of voltage pulses to single-crystalline GeTe nanowire memory devices introduces structural disorder in the form of dislocations and antiphase boundaries (APB) suggesting the role of electronic instabilities during the structural phase-change.