S
Saumil Joshi
Researcher at University of Massachusetts Amherst
Publications - 27
Citations - 3886
Saumil Joshi is an academic researcher from University of Massachusetts Amherst. The author has contributed to research in topics: Rectenna & Diode. The author has an hindex of 14, co-authored 27 publications receiving 2642 citations. Previous affiliations of Saumil Joshi include University of Colorado Boulder.
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Journal ArticleDOI
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang,Saumil Joshi,Sergey Savel'ev,Hao Jiang,Rivu Midya,Peng Lin,Miao Hu,Ning Ge,John Paul Strachan,Zhiyong Li,Qing Wu,Mark Barnell,Geng Lin Li,Huolin L. Xin,R. Stanley Williams,Qiangfei Xia,Jianhua Yang +16 more
TL;DR: The diffusive Ag-in-oxide memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities.
Journal ArticleDOI
Fully memristive neural networks for pattern classification with unsupervised learning
Zhongrui Wang,Saumil Joshi,Sergey Savel'ev,Wenhao Song,Rivu Midya,Yunning Li,Mingyi Rao,Peng Yan,Shiva Asapu,Ye Zhuo,Hao Jiang,Peng Lin,Can Li,Jung Ho Yoon,Navnidhi K. Upadhyay,Jiaming Zhang,Miao Hu,John Paul Strachan,Mark Barnell,Qing Wu,Huaqiang Wu,R. Stanley Williams,Qiangfei Xia,Jianhua Yang +23 more
TL;DR: It is shown that a diffusive memristor based on silver nanoparticles in a dielectric film can be used to create an artificial neuron with stochastic leaky integrate-and-fire dynamics and tunable integration time, which is determined by silver migration alone or its interaction with circuit capacitance.
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A novel true random number generator based on a stochastic diffusive memristor
Hao Jiang,Daniel Belkin,Daniel Belkin,Sergey Savel'ev,Siyan Lin,Zhongrui Wang,Yunning Li,Saumil Joshi,Rivu Midya,Can Li,Mingyi Rao,Mark Barnell,Qing Wu,Jianhua Yang,Qiangfei Xia +14 more
TL;DR: A novel true random number generator utilizing the stochastic delay time of threshold switching in a Ag:SiO2 diffusive memristor, which exhibits evident advantages in scalability, circuit complexity, and power consumption.
Journal ArticleDOI
Anatomy of Ag/Hafnia-Based Selectors with 10 10 Nonlinearity
Rivu Midya,Zhongrui Wang,Jiaming Zhang,Sergey Savel'ev,Can Li,Mingyi Rao,Moon-Hyung Jang,Saumil Joshi,Hao Jiang,Peng Lin,Kate J. Norris,Ning Ge,Qing Wu,Mark Barnell,Zhiyong Li,Huolin L. Xin,R. Stanley Williams,Qiangfei Xia,Jianhua Yang +18 more
TL;DR: High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.