Amplification of ultrashort optical pulses in semiconductor laser amplifiers is shown to result in considerable spectral broadening and distortion as a result of the nonlinear phenomenon of self-phase modulation (SPM). The physical mechanism behind SPM is gain saturation, which leads to intensity-dependent changes in the refractive index in response to variations in the carrier density. The effect of the shape and the initial frequency chirp of input pulses on the shape and the spectrum of amplified pulses is discussed in detail. Particular attention is paid to the case in which the input pulsewidth is comparable to the carrier lifetime so that the saturated gain has time to recover partially before the trailing edge of the pulse arrives. The experimental results, performed by using picosecond input pulses from a 1.52- mu m mode-locked semiconductor laser, are in agreement with the theory. When the amplified pulse is passed through a fiber, it is initially compressed because of the frequency chirp imposed on it by the amplifier. This feature can be used to compensate for fiber dispersion in optical communication systems. >

Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers

Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport. >

High speed quantum-well lasers and carrier transport effects

In this review we discuss the theoretical framework needed for studying the dynamical behaviour of semiconductor lasers exposed to three kinds of optical modulation. We start by a derivation of the single-mode rate-equations for the slowly varying complex electric field and the inversion, and the necessary extensions for monochromatic optical injection and normal external optical feedback. The basic operating characteristics of the solitary semiconductor laser are analysed, including light-current curves and their dependence on the spontaneous emission level, as well as the optical spectrum. The effect of monochromatic injection is discussed in terms of locking and non-locking dynamics, including a thermodynamic potential for phase jumps. The basic ingredients for studying external optical feedback are given, including a derivation of the thermodynamic potential for phase-diffusion. After an introduction on optical phase conjugation, the field rate-equation for feedback from a phase-conjugate mirror is derived.

http://iopscience.iop.org/article/10.1088/1355-5111/7/2/003/pdf

Semiconductor lasers with optical injection and feedback

The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by the k . p method and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.

Density-matrix theory of semiconductor lasers with relaxation broadening model - Gain and gain-suppression in semiconductor lasers

The current status of semiconductor lasers used in coherent optical fiber communications is reviewed for nonexperts in the field. The issues of spectral purity, tuning, modulation, and advanced fabrication methods for photonic integration are discussed, with examples drawn from current experimental devices. >

Semiconductor lasers for coherent optical fiber communications

Ultrafast gain dynamics in GaAlAs diode amplifiers have been studied using 100 fs optical pulses. Pulse propagation through the amplifier resulted in temporal broadening and pulse shaping due to both gain saturation and material dispersion. Pump‐probe experiments indicate the presence of two processes contributing to the gain dynamics but give no evidence of spectral hole burning. A dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of our results on the dynamic response of laser diodes are discussed.

Subpicosecond gain dynamics in GaAlAs laser diodes

We present results of tunable probe measurements of ultrafast dynamics in AIGaAs diode laser amplifiers. The use of gated upconversion has allowed the observation of subpicosecond gain depletion and recovery with pump-probe separations of up to 30 nm. The data show no sign of spectral hole burning and are consistent with the mechanism of dynamic carrier heating.

Morris P. Kesler

Papers

Subpicosecond gain dynamics in GaAlAs laser diodes

Subpicosecond spectral gain dynamics in AlGaAs laser diodes