Motohisa Hirao

TL;DR: In this paper, a method of fabricating diffraction gratings where a photomask is arranged on a substrate which is coated with a photoresist, light is to be incident thereupon at an acute angle relative to the normal direction of the photOMask, and a bright/dark pattern is formed on said photoresists by the interference of the transmission light that has passed through the photomasks and the diffraction light.

TL;DR: Disclosed as mentioned in this paper is a distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator, which can realize stable single longitudinal mode oscillation.

TL;DR: A monolithic optoelectronic integrated circuit (OEIC) incorporating laser diodes, photomonitors, and laser driving and monitoring circuits has been fabricated on a semi-insulating GaAs substrate as discussed by the authors.

TL;DR: In this article, a 1.3 µm InGaAsP InP buried heterostructure laser with optimized stripe widths of 1.5 µm was used for high temperature operation up to 95°C.

TL;DR: A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein this paper.