We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Gan : processing, defects, and devices

The present invention is directed to nanofiber yarns, ribbons, and sheets; to methods of making said yarns, ribbons, and sheets; and to applications of said yarns, ribbons, and sheets. In some embodiments, the nanotube yarns, ribbons, and sheets comprise carbon nanotubes. Particularly, such carbon nanotube yarns of the present invention provide unique properties and property combinations such as extreme toughness, resistance to failure at knots, high electrical and thermal conductivities, high absorption of energy that occurs reversibly, up to 13% strain-to-failure compared with the few percent strain-to-failure of other fibers with similar toughness, very high resistance to creep, retention of strength even when heated in air at 450°C for one hour, and very high radiation and UV resistance, even when irradiated in air. Furthermore these nanotube yarns can be spun as one micron diameter yarns and plied at will to make two-fold, four-fold, and higher fold yarns. Additional embodiments provide for the spinning of nanofiber sheets having arbitrarily large widths. In still additional embodiments, the present invention is directed to applications and devices that utilize and/or comprise the nanofiber yarns, ribbons, and sheets of the present invention.

Fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor device

GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.

GaInNAs: a novel material for long-wavelength semiconductor lasers

We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm2, and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127 K in the temperature range from 25 to 85° C.

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

An information processor of a high reliability and a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, used for the same, are provided. An optical information processor of a high reliability and a high recording density enables a moving picture, such as a high-definition television picture, to be recorded and reproduced satisfactorily. A barrier layer in a quantum-well active layer of a semiconductor light emitting device is doped with n-type impurities at a high density. Alternatively, the face orientation of a quantum-well active layer of a semiconductor light emitting device is a plane inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be decreased. The semiconductor light emitting device is typified by a gallium nitride based compound semiconductor laser device.

Optical information processing equipment and semiconductor light emitting device suitable therefor

Narrow spectral linewidth lasers are developed for optical coherent transmission systems. To obtain a narrow spectral linewidth, a CPM (corrugation-pitch modulated) structure is introduced into 1200- mu m-long MQW-DFB (multi-quantum well distributed feedback) lasers. The CPM structure effectively suppresses the axial spatial hole burning effect and stabilized single-mode spectrum at high output powers. A spectral linewidth of 170 kHz was achieved at an output power of 25 mW. Details of corrugation fabrication method that makes the CPM structure possible are described. >

Corrugation-pitch modulated MQW-DFB lasers with narrow spectral linewidth

A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.

Makoto Okai

Papers

GaInNAs: a novel material for long-wavelength semiconductor lasers

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

Optical information processing equipment and semiconductor light emitting device suitable therefor

Corrugation-pitch modulated MQW-DFB lasers with narrow spectral linewidth

Graphene grown substrate and electronic/photonic integrated circuits using same