M
Muhammad Farooq Khan
Researcher at Sejong University
Publications - 97
Citations - 1879
Muhammad Farooq Khan is an academic researcher from Sejong University. The author has contributed to research in topics: Graphene & Medicine. The author has an hindex of 20, co-authored 64 publications receiving 1103 citations. Previous affiliations of Muhammad Farooq Khan include Quaid-i-Azam University & Korea Research Institute of Standards and Science.
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Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.
TL;DR: A chemical doping technique to achieve low contact resistance by keeping the intrinsic properties of few layers WS2 by using LiF doping in contact engineering of TMDs is reported.
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Large-area, continuous and high electrical performances of bilayer to few layers MoS 2 fabricated by RF sputtering via post-deposition annealing method
Sajjad Hussain,Jai Singh,Dhanasekaran Vikraman,Arun Kumar Singh,Muhammad Zahir Iqbal,Muhammad Farooq Khan,Pushpendra Kumar,Dong-Chul Choi,Wooseok Song,Ki-Seok An,Jonghwa Eom,Wan-Gyu Lee,Jongwan Jung +12 more
TL;DR: The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.
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n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration
Atteq ur Rehman,Muhammad Farooq Khan,Muhammad Arslan Shehzad,Sajjad Hussain,Muhammad Fahad Bhopal,Sang Hee Lee,Jonghwa Eom,Yongho Seo,Jongwan Jung,Soo Hong Lee +9 more
TL;DR: This work proposes an Al2O3-based passivation at the MoS2 surface to improve the photovoltaic performance of bulklike MoS 2/Si solar cells and exhibits an improved power conversion efficiency of 5.6%, which to the knowledge is the highest efficiency among all bulklikeMoS2-based photovolar cells.
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Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering
Sajjad Hussain,Muhammad Arslan Shehzad,Dhanasekaran Vikraman,Muhammad Farooq Khan,Jai Singh,Dong-Chul Choi,Yongho Seo,Jonghwa Eom,Wan-Gyu Lee,Jongwan Jung +9 more
TL;DR: In this paper, a two-step process was employed to synthesize MoS2 transistors, which exhibited high mobility values of ∼21 cm2 V−1 s−1 (bilayer) and ∼25 cm 2 V− 1 s− 1 (trilayer).
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Room temperature spin valve effect in NiFe/WS₂/Co junctions.
TL;DR: Exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.