The organization of behavior: A neuropsychological theory

Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects

A comprehensive review on synthesis and applications of molybdenum disulfide (MoS2) Material: Past and Recent Developments

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

State of the Art and Future Perspectives in Advanced CMOS Technology.

Continuous shrinking of the size of CMOS technology leads to extremely fast devices, but the resulting interconnect structures impose so many parasitic effects that the advantage of extremely scaled and ultrahigh-speed transistors would be completely overshadowed if appropriate remedial steps are not taken. This requires an accurate and efficient estimation of interconnect parasitics and analysis of their impact on integrated circuit performance. This paper proposes a new delay model for RLC interconnect networks in CMOS technology based on a second order approximate transfer function. The proposed modeling approach includes all possible scenarios (complex poles, real poles, and double poles) in the interconnect model. Simulation results show that the proposed delay model is almost independent of the ratio of ${V}_{\mathrm { {out}}} / V_{\mathrm { {in}}}$ , and the driver resistance has significant impact on the delay. The simulation results also show that the real pole model provides better accuracy and is much faster than the complex pole model. This observation would help to optimize the values of interconnect parasitics for faster operation.

Analytical Models of High-Speed RLC Interconnect Delay for Complex and Real Poles

Molybdenum disulfide (MoS2) is considered as a promising alternative to conventional semiconductor materials that used in the IC industry because of its novel properties. In this paper, we explore the optical and electronic properties of MoS2 for photodetector and transistors applications. This simulation is done using ‘DFT materials properties simulator’. Our findings show that mono- and multi-layer MoS2 is suitable for conventional and tunnel FET applications due to direct and indirect band-gap respectively. The bulk MoS2 crystal, which are composed of stacked layers have indirect bandgap and mono-layer MoS2 crystal form direct bandgap at the K-point of Brillouin zone. Indirect bandgap of bulk MoS2 crystal implies that phonons need to be involved in band-to-band tunneling (BTBT) process. Degenerately doped semiconductor, which is basically spinning the Fermi level, changing the DOS profile, and thinning the indirect bandgap that allow tunneling from valence band to conduction band. The optical properties of MoS2 is explored in terms of Absorption coefficient, extinction coefficient and refractive index. Our results shows that a MoS2 based photodetector can be fabricate to detect light in the visible range (below 500nm). It is also observed that the MoS2 is most sensitive for the light of wavelength 450nm.

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Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

—With the integration of Internet and multimedia applications in next generation wireless communications, the demand for wide-band high data rate communication services is growing. As the available radio spectrum is limited, higher data rates can be achieved only by designing more efficient signaling techniques. Recent research in information theory has shown that large gains in capacity of communication over wireless channels are feasible in multiple input multiple output (MIMO) systems as well as significantly enhances the system performance compared to conventional systems in fading multipath channel environment. The MIMO channel is constructed with multiple element array antennas at both ends of the wireless link. All these MIMO techniques are based on proper handling of (Alamouti scheme and maximum ratio combining method) signals transmitted and received by an array of antennas. Simulation results show very high performance in terms of bit error rate, even for low signal-to-noise ratios.

Performance Analysis of Wireless MIMO System by Using Alamouti's Scheme and Maximum Ratio Combining Technique

Having a 1D material like Multiwall Carbon Nanotube (MWCNT) as a potential candidate for high speed Very Large Scale Integration (VLSI) interconnect creates a good scope to reduce the delay by estimating the parasitic elements i.e. Resistance ( $R$ ), Inductance ( $L$ ) and Capacitance ( $C$ ) properly. We have contrived an innovative configuration namely Tetramorphic (TM) for the bundle of MWCNTs with four different diameters. We have focused on 45 nm, 22 nm, 11 nm and 7 nm technology nodes to justify the novelty of our proposed configuration over the existing MWCNT bundle configurations. Having the parasitic $RLC$ elements for a specific technology node, the diameter optimization took place in this work. Subsequently, we obtain the propagation delay results for local, semi-global and global level interconnect. Finally, we compare the results with the other existing configuration to show the supremacy of our introduced configuration for MWCNT bundle to explore high speed VLSI interconnect and represent crosstalk delay and power dissipation. Moreover, this configuration is highly dense which will offer the size shrinkage feature in a substantial manner.

Mathematical Framework of Tetramorphic MWCNT Configuration for VLSI Interconnect

In this paper, we propose a new configuration, named squarely packed bundle of polymorphic SWCNTs, to acquire a better performance than previously developed configuration namely hexagonally packed bundle. Subsequently, we alter the existing RLC model according to the physics based requisites of our proposed configuration. We, in the end, demonstrate a comparison among extracted RLC value and delay model of Cu and differently configured SWCNT interconnects in regards to pre-defined parameters. Having analyzed our proposed squarely packed polymorphic configuration of isolated SWCNT in SWCNT-bundle, we yield a better performance of SWCNT. In fact, using this configuration, it is depicted through simulation that SWCNT bundle can outperform copper interconnect for local level interconnect. This work reinforces further the acceptability of SWCNT as interconnect to deal with scaling issue in VLSI technologies.

Muhammad Sana Ullah

Papers

Analytical Models of High-Speed RLC Interconnect Delay for Complex and Real Poles

Analysis of optical and electronic properties of MoS2 for optoelectronics and FET applications

Performance Analysis of Wireless MIMO System by Using Alamouti's Scheme and Maximum Ratio Combining Technique

Mathematical Framework of Tetramorphic MWCNT Configuration for VLSI Interconnect

Performance Analysis of Squarely Packed Polymorphic SWCNT Interconnect