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Numerical Methods For Partial Differential Equations

The Physics of Low-dimensional Semiconductors: An Introduction; J.H. Davies, Cambridge University Press, UK, ISBN 0-521-48491-X, $44.95

In this Letter we present the electrical and electro-optical characterization of single crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements were performed on vapor–liquid–solid (VLS) grown germanium (Ge) NWs, monolithically integrated into a micromechanical 3-point strain module. Uniaxial stress is applied along the ⟨111⟩ growth direction of individual, 100 nm thick Ge NWs while at the same time performing electrical and optical characterization at room temperature. Compared to bulk germanium, an anomalously high and negative-signed piezoresistive coefficient has been found. Spectrally resolved photocurrent characterization on strained NWs gives experimental evidence on the strain-induced modifications of the band structure. Particularly we are revealing a rapid decrease in resistivity and a red-shift in photocurrent spectra under high strain conditions. For a tensile strain of 1.8%, resistivity decreased by a factor of 30, and the photocurrent spectra shifted by 88 meV...

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Due to resource constraints in wireless sensor networks and the presence of unwanted conditions in communication systems and transmission channels, the suggestion of a robust method which provides battery lifetime increment and relative security is of vital importance. This paper considers the secure communication in wireless sensor networks based on new robust adaptive finite time chaos synchronization approach in the presence of noise and uncertainty. For this purpose, the modified Chua oscillators are added to the base station and sensor nodes to generate the chaotic signals. Chaotic signals are impregnated with the noise and uncertainty. At first, we apply the modified independent component analysis to separate the noise from the chaotic signals. Then, using the adaptive finite-time sliding mode controller, a control law and an adaptive parameter-tuning method is proposed to achieve the finite-time chaos synchronization under the noisy conditions and parametric uncertainties. Synchronization between the base station and each of the sensor nodes is realized by multiplying a selection matrix by the specified chaotic signal which is broadcasted by the base station to the sensor nodes. Simulation results are presented to show the effectiveness and applicability of the proposed technique.

Secure communication in wireless sensor networks based on chaos synchronization using adaptive sliding mode control

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

State of the Art and Future Perspectives in Advanced CMOS Technology.

Sn Content Dependent Absorption in GeSn Quantum Well Layer for Infrared Sensing

A device simulation model for localized contact rear side oxide-passivated solar cell has been developed to study the effects of rear contact coverage and fixed charge density dependent field-effect passivation on the performance of <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-Si solar cell. Models describing hetero-interface physics related to metal-semiconductor, metal-oxide-semiconductor junctions and interface recombination are considered in the simulation, results of which are verified with the reported experimental data. A detailed analysis of the effect of surface passivation is presented and an analytical design with optimized set of parameters is outlined for fabricating the cell. The result shows that the efficiency of the solar cell can be substantially enhanced by controlling parameters mainly the ratio between localized back contact to the non-contact area and the fixed charge density at the oxide-interface. A maximum efficiency of <inline-formula> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula>25% for a crystalline <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-Si solar cell with a comparatively lower lifetime can be obtained by a suitable choice of the design parameters with an added suitable choice of doping concentration in the emitter and absorber and the oxide layer thickness.

Effect of Rear Contact Coverage and Improvement of Efficiency of Crystalline p-Si Solar Cell Compared to State of Art PERC Cell

Modeling and design of Si/SiGe radial heterojunction microwire array solar cell with pyramidal reflectors

Here, we report the magnetic properties of LaMnO3, LaFeO3 thin films and their heterostructures, fabricated using Pulse laser deposition technique (PLD) on SrTiO3(001) substrate. The crystal structure, surface morphology signifies the phase pure epitaxial growth of LaMnO3 and LaFeO3 films and their heterostructure. The magnetic characteristics of individual LaMnO3 and LaFeO3 films along with their heterostructures were studied to explore the proximity effect of the different antiferromagnets. We demonstrate that LaMnO3 thin film shows ferromagnetic signal with inconspicuous Tc. The ferromagnetic signal is stronger in case of LaMnO3 grown on buffered LaFeO3 and LaFeO3 on top of LaMnO3. The change of Tc is analyzed in heterostructures as compared to the bare LaMnO3. Additionally, our study illustrates the variation of anisotropic energy and spin flop coupling between the interface with alternate growth sequence of heterojunctions.

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Magnetic Proximity Effect in LaMnO3-LaFeO3 Bilayer

In this paper, the performance of a microcrystalline silicon based solar cell has been measured using the effect of the pyramidally textured absorber layer's height and width. It has been found that the effect of varying width on Jsc (mA/cm2), Voc (Volt), Fill factor (FF percent) and Efficiency (%) is greater than that of varying height of the texturized surface. The simulation results shows that when the average width to height ratio of the texturized surface is close to an optimal value, light is efficiently trapped inside the absorber layer, resulting in maximum efficiency for microcrystalline silicon based solar cells without a back surface field layer.

Mukul K. Das

Papers

Sn Content Dependent Absorption in GeSn Quantum Well Layer for Infrared Sensing

Effect of Rear Contact Coverage and Improvement of Efficiency of Crystalline p-Si Solar Cell Compared to State of Art PERC Cell

Modeling and design of Si/SiGe radial heterojunction microwire array solar cell with pyramidal reflectors

Magnetic Proximity Effect in LaMnO3-LaFeO3 Bilayer

Effect of Width and Height of Textured Substrate on the Performance of Microcrystalline Silicon Based Solar Cell