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Numerical Methods For Partial Differential Equations

The Physics of Low-dimensional Semiconductors: An Introduction; J.H. Davies, Cambridge University Press, UK, ISBN 0-521-48491-X, $44.95

In this Letter we present the electrical and electro-optical characterization of single crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements were performed on vapor–liquid–solid (VLS) grown germanium (Ge) NWs, monolithically integrated into a micromechanical 3-point strain module. Uniaxial stress is applied along the ⟨111⟩ growth direction of individual, 100 nm thick Ge NWs while at the same time performing electrical and optical characterization at room temperature. Compared to bulk germanium, an anomalously high and negative-signed piezoresistive coefficient has been found. Spectrally resolved photocurrent characterization on strained NWs gives experimental evidence on the strain-induced modifications of the band structure. Particularly we are revealing a rapid decrease in resistivity and a red-shift in photocurrent spectra under high strain conditions. For a tensile strain of 1.8%, resistivity decreased by a factor of 30, and the photocurrent spectra shifted by 88 meV...

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Due to resource constraints in wireless sensor networks and the presence of unwanted conditions in communication systems and transmission channels, the suggestion of a robust method which provides battery lifetime increment and relative security is of vital importance. This paper considers the secure communication in wireless sensor networks based on new robust adaptive finite time chaos synchronization approach in the presence of noise and uncertainty. For this purpose, the modified Chua oscillators are added to the base station and sensor nodes to generate the chaotic signals. Chaotic signals are impregnated with the noise and uncertainty. At first, we apply the modified independent component analysis to separate the noise from the chaotic signals. Then, using the adaptive finite-time sliding mode controller, a control law and an adaptive parameter-tuning method is proposed to achieve the finite-time chaos synchronization under the noisy conditions and parametric uncertainties. Synchronization between the base station and each of the sensor nodes is realized by multiplying a selection matrix by the specified chaotic signal which is broadcasted by the base station to the sensor nodes. Simulation results are presented to show the effectiveness and applicability of the proposed technique.

Secure communication in wireless sensor networks based on chaos synchronization using adaptive sliding mode control

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

State of the Art and Future Perspectives in Advanced CMOS Technology.

In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

Effect of doping and other device parameters on inter sub-band transition in the well, responsivity and dark current of GaAs/AlxGa1−xAs quantum well infrared photodetector (QWIP) is investigated using theoretical model. 2X2 Hamiltonian method is used to calculate Eigen energy states in this modelling. Results show that peak absorption, responsivity and spectral broadening width increase nonlinearly with increasing doping concentration in the well. Peak absorption coefficient increases with increase in well width also. Moreover, with increase in mole fraction of Al in AlxGa1−xAs barrier, the inter sub-band absorption is enhanced but, peak wavelength of absorption shifts towards shorter wavelengths. Dark current density depends on both, the doping concentration and applied bias.

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Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications

http://iopscience.iop.org/article/10.1088/1361-6641/aadf71/pdf

Numerical study on the interface properties of a ZnO/c-Si heterojunction solar cell

In this paper, the responsivity of a resonant-cavity-enhanced SiGe/Si multiple quantum well photodetector has been theoretically investigated. The present model considers the effects of material parameters of Si1−xGex and recombination of carriers confined by the potential barriers at the heterointerfaces of Si1−xGex/Si quantum wells on the detector responsivity for different Ge-contents (x). The effect of electric field due to applied bias on the emission of confined carriers from quantized subbands has also been included in the analysis. Results show that though high Ge-content is required to enhance the responsivity of the SiGe/Si photodetector for long-haul communication (at 1.3 and 1.55 μm), the confinement of holes at the heterointerfaces may be significant to affect the responsivity adversely. Studies at 1.3 and 1.55 μm also show that the responsivity of the photodetector for a particular Ge-content in the active layer can be increased by suitable choice of well parameters and applied bias.

Calculating the responsivity of a resonant-cavity-enhanced Si1−xGex/Si multiple quantum well photodetector

Apart from excellent electrostatic capability and immunity to short-channel effects, the performance of gate-all-around (GAA) nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) can be further enhanced by incorporating strain. Owing to the technological importance of strained GAA (S-GAA) NW MOSFETs in modern electronics, we have proposed an analytical model of the threshold voltage and drain current for S-GAA NW MOSFETs taking into account the appreciable contributions of source (S) and drain (D) series resistances in the nanometer regime, along with quantum mechanical effect. We have focused on the elliptical cross section of the device as is necessary to consider the fabrication imperfections which give rise to such cross section, rather than an ideal circular structure. Incorporating S/D series resistance in the model of drain current demands for algorithms based on multi-iterative technique, which has been proposed in this paper for analyzing the impact of strain, NW width, aspect ratio and so on, on the performance of S-GAA NW devices with emphasis on CMOS digital circuits. Based on our proposed methodology, we have also investigated the scope of using high-k dielectric materials and metal gate in S-GAA NW structures.

Mukul K. Das

Papers

High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

Influence of doping on the performance of GaAs/AlGaAs QWIP for long wavelength applications

Numerical study on the interface properties of a ZnO/c-Si heterojunction solar cell

Calculating the responsivity of a resonant-cavity-enhanced Si1−xGex/Si multiple quantum well photodetector

Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications