numerical methods for partial differential equations is available in our digital library an online access to it is set as public so you can download it instantly. Our digital library hosts in multiple locations, allowing you to get the most less latency time to download any of our books like this one. Kindly say, the numerical methods for partial differential equations is universally compatible with any devices to read.

Numerical Methods For Partial Differential Equations

The Physics of Low-dimensional Semiconductors: An Introduction; J.H. Davies, Cambridge University Press, UK, ISBN 0-521-48491-X, $44.95

In this Letter we present the electrical and electro-optical characterization of single crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements were performed on vapor–liquid–solid (VLS) grown germanium (Ge) NWs, monolithically integrated into a micromechanical 3-point strain module. Uniaxial stress is applied along the ⟨111⟩ growth direction of individual, 100 nm thick Ge NWs while at the same time performing electrical and optical characterization at room temperature. Compared to bulk germanium, an anomalously high and negative-signed piezoresistive coefficient has been found. Spectrally resolved photocurrent characterization on strained NWs gives experimental evidence on the strain-induced modifications of the band structure. Particularly we are revealing a rapid decrease in resistivity and a red-shift in photocurrent spectra under high strain conditions. For a tensile strain of 1.8%, resistivity decreased by a factor of 30, and the photocurrent spectra shifted by 88 meV...

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Due to resource constraints in wireless sensor networks and the presence of unwanted conditions in communication systems and transmission channels, the suggestion of a robust method which provides battery lifetime increment and relative security is of vital importance. This paper considers the secure communication in wireless sensor networks based on new robust adaptive finite time chaos synchronization approach in the presence of noise and uncertainty. For this purpose, the modified Chua oscillators are added to the base station and sensor nodes to generate the chaotic signals. Chaotic signals are impregnated with the noise and uncertainty. At first, we apply the modified independent component analysis to separate the noise from the chaotic signals. Then, using the adaptive finite-time sliding mode controller, a control law and an adaptive parameter-tuning method is proposed to achieve the finite-time chaos synchronization under the noisy conditions and parametric uncertainties. Synchronization between the base station and each of the sensor nodes is realized by multiplying a selection matrix by the specified chaotic signal which is broadcasted by the base station to the sensor nodes. Simulation results are presented to show the effectiveness and applicability of the proposed technique.

Secure communication in wireless sensor networks based on chaos synchronization using adaptive sliding mode control

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

State of the Art and Future Perspectives in Advanced CMOS Technology.

In this work we present a small signal analysis of Ge-Si 0.12 Ge 0.73 Sn 0.15 /Si 0.11 Ge 0.73 Sn 0.16 n-p-n mid-infrared transistor laser (TL) with strain-balanced Ge 0.85 Sn 0.15 multiple quantum well (QW) in the base. The frequency response of TL for common base (CB) configuration is calculated from small signal relationship between the photon density and emitter current density by solving laser rate equation and continuity equation considering the virtual states as a conversion mechanism. The result shows that modulation bandwidth initially increases then decreases with number of QW.

Small signal analysis of tin-incorporated group-IV alloys based multiple quantum well Transistor Laser

Some studies on surface morphological properties of SnOx thin film layer grown by e-beam technique under controlled oxygen pressure

This paper presents a novel approach for the determination of resonance frequencies in silica fiber using composite susceptibility model and Stimulated Raman Scattering (SRS) gain The Raman gain coefficient in silica fiber is calculated in terms of composite susceptibility model where resonance frequencies of material are considered Composite susceptibility is optimized using Genetic Algorithm to match calculated gain with the experimental results and, hence eight resonance frequencies are found

Mukul K. Das

Papers

Small signal analysis of tin-incorporated group-IV alloys based multiple quantum well Transistor Laser

Some studies on surface morphological properties of SnOx thin film layer grown by e-beam technique under controlled oxygen pressure

Determination of resonance frequencies in silica fiber using SRS gain

Performance Analysis of Perovskite on Si Tandem Solar Cell

A comparative analysis of the photoluminescence spectra of annealed ultrasmall In-rich InGaN/GaN quantum dots and wells