M
Mustafa Gunes
Researcher at Adana Science and Technology University
Publications - 45
Citations - 398
Mustafa Gunes is an academic researcher from Adana Science and Technology University. The author has contributed to research in topics: Thin film & Quantum well. The author has an hindex of 12, co-authored 41 publications receiving 308 citations. Previous affiliations of Mustafa Gunes include Istanbul University & University of Essex.
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Journal ArticleDOI
Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures
Mustafa Akyol,Mustafa Akyol,Wanjun Jiang,Guoqiang Yu,Yabin Fan,Mustafa Gunes,Ahmet Ekicibil,Pedram Khalili Amiri,Kang L. Wang +8 more
TL;DR: In this article, the authors studied the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures.
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Magnetocaloric effect in (La1−xSmx)0.67Pb0.33MnO3 (0 ≤ x ≤ 0.3) manganites near room temperature
TL;DR: In this paper, the structure, magnetic and magnetocaloric properties of perovskite manganites synthesized by sol-gel technique have been investigated and the results indicate that the sample undergoes a reversible temperature change on field-cycling which is essential for magnetic refrigeration.
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Effect of Annealing Temperature on The physical Properties of Mn3O4 Thin Film Prepared by Chemical Bath Deposition
TL;DR: Cemalulutas et al. as discussed by the authors proposed a method for physics department at Hakkari University to improve the performance of the university's physics department, which is the first department of physics at the university.
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A study of the electronic and physical properties of SnO2 thin films as a function of substrate temperature
TL;DR: In this paper, the tin dioxide (SnO2) thin films were prepared at various substrate temperatures (380-440°C, in steps of 20°C) on glass substrates by the Spray Pyrolysis Method.
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The effect of annealing temperature on the physical properties of Cu2O thin film deposited by SILAR method
TL;DR: In this article, the effect of the annealing temperature on the physical properties of the Cu2O film was investigated and the phase-transition temperature that corresponds to the transformation from C2O to CuO was occurred at temperature of approximately 300°C.