Infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x<0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range. The values of full width at half maximum of the PL peaks show that the epitaxial layer quality is comparable to that grown by molecular‐beam epitaxy. The observed small peak shift with temperature for most InAs1−xSbx epilayers may be explained by wave‐vector‐nonconserving transitions involved in the PL emission. For comparison, PL spectra from InSb/InSb and InAs/InAs show that the wave‐vector‐conserving mechanism is responsible for the PL emission. The temperature dependence of the energy band gaps, Eg, in InSb and InAs is shown to follow Varshni’s equation Eg(T)=Eg0−αT2/ (T+β). The empirical constants are calculated to be Eg0=235 meV, α=0.270 meV/K, and β=106 K for InSb and Eg0=415 meV, α=0.276 meV/K, and β=83 K for InAs.

Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.

The temperature dependence of the band gaps in InP, InAs, InSb, and GaSb

Arsenic-rich InAs/lnAs1-xSbx strained layer superlattices (SLSs) grown on GaAs substrates by molecular beam epitaxy (MBE) are studied for their potential application as infrared emitters. The long-wavelength emission (4-11 mu m) is highly sensitive to superlattice design parameters and is accounted for by a large type-II band offset, greater than in previously studied antimony-rich InSb/lnAs1-xSbx SLSs. High internal PL efficiencies (>10%) and intense luminescence emission were observed at these long wavelengths despite large dislocation densities. Initial unoptimized InAs/lnAs1-xSbx SLS light emitting diodes gave approximately=200 nW of lambda =5 mu m emission at 300 K.

https://iopscience.iop.org/article/10.1088/0268-1242/10/8/023/pdf

4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbx strained layer superlattices

Temperature- and excitation-dependent photoluminescence measurements have been carried out on 0.7-5 mu m thick heteroepitaxial InAs layers grown by molecular beam epitaxy (MBE). Excitonic photoluminescence with linewidths down to 5 meV reveals the high optical quality of the epilayers despite the 7% mismatch between the InAs and the GaAs substrates. Peaks at 403 and 391 meV, which quench rapidly with increasing temperature, are attributed to bound excitons, and a sharp (7 meV FWHM) intense line at 417 meV is tentatively attributed to free excitonic recombination. A broad 18 meV wide band (peaking at 378 meV) which blue shifts with increasing excitation, characteristic of a donor-acceptor pair transition band, is reported for the first time in InAs.

https://iopscience.iop.org/article/10.1088/0268-1242/8/12/017/pdf

N.L. Rowell

Papers

Infrared photoluminescence of intrinsic InSb

Fourier transform IR spectroscopy of Co2+ excitations in KZn1−xCoxF3

IR spectrum of Co2+ Ion clusters in KZnF3

Near infrared magneto-absorption in the laser material KZn1−xCoxF3