Journal ArticleDOI
Infrared photoluminescence of intrinsic InSb
TLDR
In this article, the authors used a Fourier transform spectrometer employing both conventional and double modulation techniques to remove the effects of the considerable thermal background radiation, which allowed assignment of the three peaks observed in the spectrum to band-to-band emission, to band to impurity emission, and to acceptor-bound excitons.About:
This article is published in Infrared Physics.The article was published on 1988-01-01. It has received 26 citations till now. The article focuses on the topics: Photoluminescence & Infrared.read more
Citations
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Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.
TL;DR: In this paper, the infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x < 0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range.
Journal ArticleDOI
The temperature dependence of the band gaps in InP, InAs, InSb, and GaSb
TL;DR: In this paper, the dependence of the direct band gap E 0 on temperature in the narrow gap materials InP, InAs, InSb, and GaSb is calculated based on the Allen-Heine approach and includes two effects: (i) thermal expansion and (ii) electron-phonon interaction.
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4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbx strained layer superlattices
P. J. P. Tang,M. J. Pullin,S. J. Chung,C. C. Phillips,R. A. Stradling,Andrew G. Norman,Y B Li,L. Hart +7 more
TL;DR: Arsenic-rich InAs/lnAs1-xSbx strained layer superlattices (SLSs) were studied for their potential application as infrared emitters as discussed by the authors.
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Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates
TL;DR: In this paper, temperature and excitation-dependent photoluminescence measurements have been carried out on 0.7-5 mu m thick heteroepitaxial InAs layers grown by molecular beam epitaxy (MBE).
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Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer
Shukui Zhang,Hanxue Jiao,Xudong Wang,Yan Chen,Hailu Wang,Liqing Zhu,Wei Jiang,Jingjing Liu,Liaoxin Sun,Tie Lin,Hong Shen,Weida Hu,Xiangjian Meng,Dong Pan,Jianlu Wang,Jianhua Zhao,Junhao Chu +16 more
References
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Book
Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Book
Optical processes in semiconductors
TL;DR: Optical processes in semiconductors as discussed by the authors, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Journal ArticleDOI
FT-Raman Spectroscopy: Development and Justification:
T. Hirschfeld,B. Chase +1 more
TL;DR: In this article, the feasibility of Fourier transform Raman spectroscopy has been investigated and a single instrument for both spectroscopies both convenient and cost-effective has been proposed.
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Photoluminescence as a diagnostic of semiconductors
TL;DR: In this paper, a review of application to extrinsic effects induced by impurities or lattice defects is presented, which is shown to be particularly suitable for the centres responsible for the shallow donor and acceptor species by which the electrical properties are usually controlled, as well as all forms of explicit luminescence activator.
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Photoacoustic spectroscopy of thick powdered or porous samples at low frequency
TL;DR: In this article, a self-contained theoretical description of the photoacoustic effect in a thick powdered or porous sample at low modulation frequencies where the sample medium can be considered homogeneous from the point of view of heat diffusion is presented.