N
N. Linder
Researcher at Osram Opto Semiconductors GmbH
Publications - 2
Citations - 217
N. Linder is an academic researcher from Osram Opto Semiconductors GmbH. The author has contributed to research in topics: Nanorod & Metalorganic vapour phase epitaxy. The author has an hindex of 2, co-authored 2 publications receiving 205 citations.
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Journal ArticleDOI
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
Werner Bergbauer,Werner Bergbauer,Martin Strassburg,Ch. Kölper,N. Linder,Claudia Roder,Jonas Lähnemann,Achim Trampert,Sönke Fündling,Shunfeng Li,Hergo-Heinrich Wehmann,Andreas Waag +11 more
TL;DR: This work demonstrates the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions, in contrast to other approaches reported so far, which have been based on growth modes far off the conventional growth regimes.
Journal ArticleDOI
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
Werner Bergbauer,Werner Bergbauer,Martin Strassburg,Ch. Kölper,N. Linder,Claudia Roder,Jonas Lähnemann,Achim Trampert,Sönke Fündling,Shunfeng Li,Hergo-Heinrich Wehmann,Andreas Waag +11 more
TL;DR: In this paper, the authors demonstrate the morphological properties of height, diameter and shape controlled N-face GaN nanorods by adjusting conventional growth parameters of a standard metalorganic vapour phase epitaxy (MOVPE) growth process.