Osram Opto Semiconductors GmbH

About: Osram Opto Semiconductors GmbH is a based out in . It is known for research contribution in the topics: Layer (electronics) & Laser. The organization has 2324 authors who have published 5022 publications receiving 35767 citations.

nextnano: General Purpose 3-D Simulations

Abstract: nextnano is a semiconductor nanodevice simulation tool that has been developed for predicting and understanding a wide range of electronic and optical properties of semiconductor nanostructures. The underlying idea is to provide a robust and generic framework for modeling device applications in the field of nanosized semiconductor heterostructures. The simulator deals with realistic geometries and almost any relevant combination of materials in one, two, and three spatial dimensions. It focuses on an accurate and reliable treatment of quantum mechanical effects and provides a self-consistent solution of the Schrodinger, Poisson, and current equations. Exchange-correlation effects are taken into account in terms of the local density scheme. The electronic structure is represented within the single-band or multiband kldrp envelope function approximation, including strain. The code is not intended to be a ldquoblack boxrdquo tool. It requires a good understanding of quantum mechanics. The input language provides a number of tools that simplify setting up device geometry or running repetitive tasks. In this paper, we present a brief overview of nextnano and present four examples that demonstrate the wide range of possible applications for this software in the fields of solid-state quantum computation, nanoelectronics, and optoelectronics, namely, 1) a realization of a qubit based on coupled quantum wires in a magnetic field, 2) and 3) carrier transport in two different nano-MOSFET devices, and 4) a quantum cascade laser.

New thermoelectric components using microsystem technologies

Abstract: This work describes the first thermoelectric devices based on the V-VI-compounds Bi/sub 2/Te/sub 3/ and (Bi,Sb)/sub 2/Te/sub 3/ which can be manufactured by means of regular thin film technology in combination with microsystem technology. Fabrication concept, material deposition for some 10-μm-thick layers and the properties of the deposited thermoelectric materials will be reported. First device properties for Peltier-coolers and thermogenerators will be shown as well as investigations on long term and cycling stability. Data on metal/semiconductor contact resistance were extracted form device data. Device characteristics like response time for a Peltier-cooler and power output for a thermogenerator will be compared to commercial devices.

Wavelength-converting casting composition and light-emitting semiconductor component

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ≦20 μm and a mean grain diameter d 50 ≦5 μm.

Photonic crystal LEDs – designing light extraction

Abstract: Laser & Photon. Rev. 3, No.3, 262–286 (2009) / DOI 10.1002/lpor.200810053Abstract Photonic crystals (PhCs) have attracted much atten-tion during the last decade as a solution to overcome the lowextraction efficiency of as-grown light-emitting diodes (LEDs).In this review we describe the underlying physics and summa-rize recent results obtained with PhC LEDs. Here, the mainfocus is on diffracting PhC. In order to quantify the benefit fromthe incorporation of PhCs for diffracting light a comparison bysimulations between a PhC LED and a standard state-of-the-art LED is carried out. Finally, the impact of the PhC on theLEDs emission characteristics will be discussed with respect toetendue-limited applications.´Azimuthal emission pattern of an InGaN/GaN LED with hexag-onal PhC at a single wavelength. Background: SEM (scanningelectron microscope) image of the PhC structure.

Light-Emitting Device

Abstract: One embodiment of the invention proposes a light-emitting device comprising a radiation source for the emission of a radiation having at least a first wavelength, and an elongated, curved light-guiding body, into which the radiation emitted by the radiation source is coupled and which couples out light at an angle with respect to its longitudinal axis on account of the coupled-in radiation having the first wavelength.