The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode fabricated on a GaN homoepitaxial layer was investigated by capacitance–voltage, current–voltage, and internal photoemission measurements in the range of 223–573 K. The barrier height obtained by these methods linearly decreased with increasing temperature. The temperature coefficient was −(1.7–2.3) × 10−4 eV/K, which is about half of the temperature coefficient of the band gap reported previously. This indicates that the decrease in the barrier height may mainly reflect the shrinkage of the band gap (lowering of the conduction band edge) in GaN with increasing temperature.

https://iopscience.iop.org/article/10.7567/APEX.10.051002/pdf

Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode

Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode

The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)2O3 Schottky diode

We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel–Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-Ga2O3 Schottky barrier diode. The effects of the surface states, on the electric field distribution, were also analyzed by TCAD simulation. With the negative surface charge densities increasing, the peak electric field reduces monotonously. Furthermore, the Schottky barrier height inhomogeneity under forward bias was also discussed.

/pdf/experimental-and-theoretical-studies-of-mo-au-schottky-1czdx2liz6.pdf

Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film.

Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diode

The current–voltage (I–V) characteristics of (Ni/Au)–InAlGaN/GaN Schottky barrier diode (SBDs) have been measured in the temperature range of 297 to 473 K. Results have been interpreted based on the assumption of Gaussian distribution (GD) of barrier heights (BH) due to BH inhomogeneities at the interface. A modified Richardson plot gives the modified Schottky barrier height (ΦBO) and Richardson constant A* as 1.41 eV and 26 A cm-2 K-2, respectively. The value of Richardson constant, 26 A cm-2 K-2, is very close to the theoretical value of 29.1 A cm-2 K-2. Therefore, the temperature dependence of the forward I–V characteristics of the (Ni/Au)–InAlGaN/GaN SBDs can be explained based on the thermionic emission mechanism with GD of BHs.

http://iopscience.iop.org/article/10.1143/JJAP.50.030201/pdf

Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode

We demonstrate linear and nonlinear plasmonic behaviors of periodic nanohole arrays in thin gold (Au) films with varying periodicities. As expected, the linear optical transmission spectra of the nanohole arrays show a red-shift of the resonance wavelength and Wood's anomaly with increasing hole spacing. The optical transmission and electric near-field intensity distribution of the nanohole arrays are simulated using the finite element method. The nonlinear plasmonic behavior of the nanohole arrays is studied by using picosecond pulsed excitation at near-infrared wavelengths. The characteristic nonlinear signals indicating two-photon excited luminescence (TPEL), sum frequency generation, second harmonic generation, and four-wave mixing (FWM) are observed. A maximum FWM/TPEL signal intensity ratio is achieved for nanohole arrays with a periodicity of 500 nm. Furthermore, the significant FWM signal intensity and contrast compared to the background were harnessed to demonstrate the ability of surface-enhanced coherent anti-Stokes Raman scattering to visualize low concentrations of lipids deposited on the nanohole array with a periodicity of 500 nm.

/pdf/nonlinear-plasmonic-behavior-of-nanohole-arrays-in-thin-gold-3sv98bi6mf.pdf

Nonlinear plasmonic behavior of nanohole arrays in thin gold films for imaging lipids

Optical amplification by surface-plasmon-resonant Au grating substrates: Monolayer MoS2 with 170-fold second harmonic generation and 3-fold (off-resonance) Raman scattering

Nagarajan Subramaniyam

Papers

Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode

Nonlinear plasmonic behavior of nanohole arrays in thin gold films for imaging lipids

Optical amplification by surface-plasmon-resonant Au grating substrates: Monolayer MoS2 with 170-fold second harmonic generation and 3-fold (off-resonance) Raman scattering