N
Naoto Kusumoto
Publications - 64
Citations - 2019
Naoto Kusumoto is an academic researcher. The author has contributed to research in topics: Semiconductor device & Thin-film transistor. The author has an hindex of 21, co-authored 64 publications receiving 2019 citations.
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Patent
Method for producing semiconductor device
Abstract: In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
Patent
Laser irradiation apparatus and laser irradiation method
TL;DR: In this paper, a laser irradiation apparatus for homogenously crystallized films is described, where the energy intensity of an irradiation beam in forward and backward directions of the irradiation is varied in accordance with the scanning direction.
Patent
Laser annealing method and laser annealing device
TL;DR: In this article, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconducting material, and the laser annealing operation can be performed effectively.
Patent
Method for producing insulated gate thin film semiconductor device
Naoto Kusumoto,Shunpei Yamazaki +1 more
TL;DR: In this article, an amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 μm or less, thereby forming island semiconductor regions.
Patent
Thin film transistor and semiconductor device including a laser crystallized semiconductor
TL;DR: A semiconductor material and a method for forming the same can be found in this article, where a process consisting of irradiating a laser beam or a high intensity light equivalent to the laser beam to an amorphous silicon film containing carbon, nitrogen, and oxygen is described.