Patent
Thin film transistor and semiconductor device including a laser crystallized semiconductor
TLDR
A semiconductor material and a method for forming the same can be found in this article, where a process consisting of irradiating a laser beam or a high intensity light equivalent to the laser beam to an amorphous silicon film containing carbon, nitrogen, and oxygen is described.Abstract:
A semiconductor material and a method for forming the same, the semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×10 19 atoms·cm -3 or lower, preferably 1×10 19 atoms·cm -3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, the semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.read more
Citations
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Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Semiconductor device and method for forming the same
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Patent
Semiconductor Device and Method of Fabricating the Same
TL;DR: In this paper, an active matrix display (AMD) with pixel electrodes, gate wirings and source wires is proposed, in which pixel electrodes are arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the amount of steps.
Patent
Electro-optical device
TL;DR: In this article, an electro-optical device having a plurality of pixels, including a majority of EL elements, provides a gray-scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period, and a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one-frame period.
Patent
Thin-film transistor
Hongyong Zhang,Shunpei Yamazaki +1 more
TL;DR: In this paper, a gate-insulated thin-film transistor with a halogen block in between the blocking layer and a gate insulator is described. But the block is not used to prevent the transistor from being contaminated with impurities such as alkali ions.
References
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Patent
Method of making a thin film transistor with laser recrystallized source and drain
TL;DR: In this article, an insulated gate field effect transistor is constructed by forming a non-single crystalline semiconductor film of a first conductivity type on an insulating substrate with the gate electrode functioning as a mask to selectively crystallize the source and drain regions.