(1961). The theory of impurity conduction. Advances in Physics: Vol. 10, No. 38, pp. 107-163.

The theory of impurity conduction

The electroreflectance spectra of Si, Ge, $\ensuremath{\alpha}$-Sn, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnO, ZnTe, CdS, CdSe, and CdTe are reported. The measurements were performed by the electrolyte technique in the 1-to 6-eV photon energy range. The data were processed by the Kramers-Kronig technique and the variation in ${\ensuremath{\epsilon}}_{1}$ and ${\ensuremath{\epsilon}}_{2}$ induced by the applied electric field obtained. Several sharp peaks were observed in all these spectra and interpreted in terms of critical points in the joint density of states for optical transitions. As a result, a large number of direct interband energy gaps and spin-orbit splittings is obtained. These spin-orbit splittings are interpreted and correlated by using the k. p method: Enough experimental information is available to determine the effects of spin-orbit interaction on the valence bands of most of these materials at any point in k space.

Electroreflectance at a Semiconductor-Electrolyte Interface

This paper presents a simple method for accurately calculating quantum mechanical transmission probability and current across arbitrary potential barriers by using the multistep potential approximation. This method is applicable to various potential barriers and wells, including continuous variations of potential energy and electron effective mass. Various potential barrier structures and a hot‐electron transistor are analyzed to show the feasibility of this method.

Calculation of transmission tunneling current across arbitrary potential barriers

Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing.

This article reviews the progress made over the last 20 years in the development and applications of liquid xenon detectors in particle physics, astrophysics, and medical imaging experiments. A summary of the fundamental properties of liquid xenon as radiation detection medium, in light of the most current theoretical and experimental information is first provided. After an introduction of the different type of liquid xenon detectors, a review of past, current, and future experiments using liquid xenon to search for rare processes and to image radiation in space and in medicine is given. Each application is introduced with a survey of the underlying scientific motivation and experimental requirements before reviewing the basic characteristics and expected performance of each experiment. Within this decade it appears likely that large volume liquid xenon detectors operated in different modes will contribute to answering some of the most fundamental questions in particle physics, astrophysics, and cosmology, fulfilling the most demanding detection challenges. From detectors based solely on liquid xenon (LXe) scintillation, such as in the MEG experiment for the search of the rare ''{mu}{yields}e{gamma}'' decay, currently the largest liquid xenon detector in operation, and in the XMASS experiment for dark matter detection, to the class ofmore » time projection chambers which exploit both scintillation and ionization of LXe, such as in the XENON dark matter search experiment and in the Enriched Xenon Observatory for neutrinoless double beta decay, unrivaled performance and important contributions to physics in the next few years are anticipated.« less

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Liquid Xenon Detectors for Particle Physics and Astrophysics

Continuous‐wave (cw) operation at temperatures up to 23 °C of an Al0.26Ga0.26In0.48P/Ga0.52In0.48P/ Al0.26Ga0.26In0.48P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 °C for a device with a 10‐μm‐wide and 250‐μm‐long ion‐implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 °C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (∼0.3 μm) p‐AlGaInP layer and a p‐Al0.76Ga0.24As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

A new method to anneal implanted silicon wafers in a few seconds using a halogen lamp as a radiation source is proposed. Boron-implanted (200 keV, 1×1013 cm-2) silicon wafers were completely activated with little diffusion by radiation for 6 seconds. Conventional annealing for 15 minutes caused diffusion of boron. It was found that the activation of implanted boron was determined by the maximum temperature during annealing.

https://iopscience.iop.org/article/10.1143/JJAP.19.L563/pdf

Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp

A new solution system consisting of , , and was found useful for etching wafers. This solution system can be divided into four regions a–d, according to etching characteristics. The boundaries between the regions are given by a mole ratio of to of about 2.3 and a mole fraction of of about 0.9 at room temperature. Rate‐limiting processes are: a, adsorption of (, ); b, diffusion of (, ); c, dissolution of oxidized products (, ); and d, adsorption of (,). Solutions in region a have a reproducible etching rate of 0.01–0.1 μm/min, which is useful for MESFET processing. Crystallographic etching is also available with solutions in region c.

A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics

Origin of a nonradiative center in AlGaAs grown by molecular‐beam epitaxy was investigated by secondary ion mass spectroscopy and deep‐level transient spectroscopy, from the change of photoluminescence intensity with anneal treatment, and from its comparison with GaAs. Aluminum‐oxygen complex is a most probable defect which acts as a nonradiative center in AlGaAs, and the oxygen would evaporate as Al2O from the surface, which would be a reason why the photoluminescence intensity increases under higher substrate temperature and lower V/III flux ratio. The electron‐trap level at 0.76 eV from the conduction band would be the recombination center, and the photoluminescence intensity is inversely proportional to the trap concentration.

Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxy

The use of radiation from halogen lamps to anneal implanted GaAs has been studied. Semi-insulating GaAs wafers implanted with 3×1012 cm-2 silicon at 70 keV were completely activated by 5 seconds rediation with or without encapsulation. The wafer temperature reached 950°C. This annealing method minimizes the thermal conversion of semi-insulating GaAs wafers.

https://iopscience.iop.org/article/10.1143/JJAP.20.L124/pdf

Naozo Watanabe

Papers

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp

A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics

Photoluminescence killer center in AlGaAs grown by molecular‐beam epitaxy

Radiation Annealing of GaAs Implanted with Si