A flexible display device and a method of manufacturing the same are provided. The flexible display device comprises a first flexible substrate including a display area including an organic light emitting layer, and a peripheral circuit area, and a second flexible substrate coming in contact with the first flexible substrate and including a pattern for facilitating bending thereof, wherein the second flexible substrate has a certain shape according to the pattern, and the first flexible substrate has a shape corresponding to the certain shape. Various embodiments of the present invention provide a flexible display device capable of realizing a narrow bezel-type or bezel-free display device and simultaneously realizing improved types of design, facilitating bending of a bezel area so as to realize a narrow bezel-type or bezel-free display device, and minimizing damage to an area to be bent.

Flexible display device and method of manufacturing the same

An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.

Organic light emitting display device and method of manufacturing the same

This review contains a comparative study of reported fabrication techniques of gallium based liquid metal alloys embedded in elastomers such as polydimethylsiloxane or other rubbers as well as the primary challenges associated with their use. The eutectic gallium–indium binary alloy (EGaIn) and gallium–indium–tin ternary alloy (galinstan) are the most common non-toxic liquid metals in use today. Due to their deformability, non-toxicity and superior electrical conductivity, these alloys have become very popular among researchers for flexible and reconfigurable electronics applications. All the available manufacturing techniques have been grouped into four major classes. Among them, casting by needle injection is the most widely used technique as it is capable of producing features as small as 150 nm width by high-pressure infiltration. One particular fabrication challenge with gallium based liquid metals is that an oxide skin is rapidly formed on the entire exposed surface. This oxide skin increases wettability on many surfaces, which is excellent for keeping patterned metal in position, but is a drawback in applications like reconfigurable circuits, where the position of liquid metal needs to be altered and controlled accurately. The major challenges involved in many applications of liquid metal alloys have also been discussed thoroughly in this article.

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Fabrication methods and applications of microstructured gallium based liquid metal alloys

The galvanic replacement reaction is a highly versatile approach for the creation of a variety of nanostructured materials. However, the majority of reports are limited to the replacement of metallic nanoparticles or metal surfaces. Here we extend this elegant approach and describe the galvanic replacement of the liquid metal alloy galinstan with Ag and Au. This is achieved at a macrosized droplet to create a liquid metal marble that comprises a liquid metal core and a solid metal shell, whereby the morphology of the outer shell is determined by the concentration of metallic ions used in the solution during the galvanic replacement process. In principle, this allows one to recover precious metal ions from solution in their metallic form, which are immobilized on the liquid metal and therefore easy to recover. The reaction is also undertaken at liquid metal microdroplets created via sonication to produce Ag- and Au-based galinstan nanorice particles. These materials are characterized with SEM, XRD, TEM, SA...

Galvanic Replacement of the Liquid Metal Galinstan

The present invention relates to a light emitting device comprising a plurality of electrically coupled light emitting elements, wherein each light emitting element has a luminous efficacy vs. current characteristic, wherein said luminous efficacy vs. current characteristic has a maximum luminous efficacy value and wherein at least one of said light emitting devices is operated at a current corresponding to a luminous efficacy value that is within 10% of said maximum luminous efficacy value. The present invention also relates to methods of making said light emitting device, to lamps comprising said light emitting device and to methods of operating said light emitting device.

High efficiency leds and led lamps

Galinstan, a gallium, indium, and tin eutectic, may be exploited for enhanced cooling of microelectronics because of its favorable thermophysical properties. A careful evaluation of its cooling potential, however, has not been undertaken. Provided here is a first-order model to compute the total (i.e., caloric plus conjugate conduction and convection) thermal resistance of galinstan-based heat sinks. Geometrically optimized minichannel heat sinks with rectangular channels for surface area enhancement and minigap, i.e., single parallel-plate channel, heat sinks are considered. Direct liquid cooling of a microprocessor die is envisioned. Therefore, the flow channels within the heat sinks are 302- μm tall, the pressure drop prescribed across them is 214 kPa, and their streamwise length is varied from 5 to 20 mm. The calculations suggest that galinstan is a better coolant than water in such configurations, reducing thermal resistance by about 40%.

On the Potential of Galinstan-Based Minichannel and Minigap Cooling

A method of protecting an electronics package is discussed along with devices formed by the method. The method involves providing at least one electronic component that requires protecting from tampering and/or reverse engineering. Further, the method includes mixing into a liquid glass material at least one of high durability micro-particles or high-durability nano-particles, to form a coating material. Further still, the method includes depositing the coating material onto the electronic component and curing the coating material deposited.

Integrated circuit tampering protection and reverse engineering prevention coatings and methods

A coating for reducing interaction between a surface and the environment around the surface includes an alkali silicate glass material configured to protect the surface from environmental corrosion due to water or moisture. The alkali silicate glass material is doped with a first element to affect various forms of radiation passing through the coating. The electromagnetic radiation is at least one of ultraviolet, x-ray, atomic (gamma, alpha, beta), and electromagnetic or radio wave radiation. The coating may also be used to protect a solar cell from the environment and UV rays while retransmitting received light as usable light for conversion into electrical energy. The coating may also be used to prevent whisker formation in metal finishes of tin, cadmium, zinc, etc.

Alkali silicate glass based coating and method for applying

A circuit board includes a pump and a channel. The channel includes a liquid metal and a coating. The liquid metal is pumped through the channel by the pump and the coating reduces diffusion and chemical reaction between the liquid metal and at least portions of the channel. The liquid metal can carry thermal energy to act as a heat transfer mechanism between two or more locations on the substrate. The substrate may include electrical interconnects to allow electrical components to be populated onto the substrate to form an electronics assembly.

System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling

Microchannel heat sinks are a relevant thermal management technology because the combination of surface area enhancement and small length scales results in low wall-to-bulk temperature differences. Previously, a thermal resistance of 0.09 °C/W was achieved when a heat flux of 790 W/cm $^{2}$ was imposed on a 1 cm $\times 1$ cm footprint portion of a 400- $\mu \text{m}$ -thick Si substrate utilizing single-phase water-based microchannel cooling and a 214 kPa pressure difference to drive the flow. Galinstan, a gallium, indium, and tin eutectic, may be utilized for single-phase liquid metal cooling of microelectronics due to its subambient melting temperature and high thermal conductivity. This paper describes the fabrication and assembly of water-based microchannel and Galinstan-based minichannel heat sinks and the flow sheets utilized to characterize them under the aforementioned constraints. The prefix mini rather than micro is used to describe Galinstan-based heat sinks because optimal channel widths are hundreds as opposed to tens of micrometers. The aforementioned thermal resistance of 0.09 °C was experimentally reproduced. Unprecedentedly low thermal resistance and high heat flux in single-phase water-based microchannel cooling, i.e., 0.071 °C/W and 1003 W/cm $^{2}$ , respectively, were achieved. The first experimental data on Galinstan-based minichannel heat sinks are also reported. A thermal resistance as low as 0.077 °C/W was achieved at a heat flux of 1214 W/cm $^{2}$ and a maximum heat flux of 1504 W/cm $^{2}$ was reached.

Nathan P. Lower

Papers

On the Potential of Galinstan-Based Minichannel and Minigap Cooling

Integrated circuit tampering protection and reverse engineering prevention coatings and methods

Alkali silicate glass based coating and method for applying

System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling

Water-Based Microchannel and Galinstan-Based Minichannel Cooling Beyond 1 kW/cm $^{2}$ Heat Flux