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Naveen Verma

Researcher at Princeton University

Publications -  182
Citations -  8223

Naveen Verma is an academic researcher from Princeton University. The author has contributed to research in topics: Electronics & CMOS. The author has an hindex of 36, co-authored 169 publications receiving 6813 citations. Previous affiliations of Naveen Verma include Massachusetts Institute of Technology.

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Graphene-based wireless bacteria detection on tooth enamel

TL;DR: Graphene can be printed onto water-soluble silk, which permits intimate biotransfer of graphene nanosensors onto biomaterials, including tooth enamel, which is a fully biointerfaced sensing platform, which can be tuned to detect target analytes.
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3D printed bionic ears.

TL;DR: A bionic ear is generated via 3D printing of a cell-seeded hydrogel matrix in the precise anatomic geometry of a human ear, along with an intertwined conducting polymer consisting of infused silver nanoparticles, which enables readout of inductively-coupled signals from cochlea-shaped electrodes.
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A Micro-Power EEG Acquisition SoC With Integrated Feature Extraction Processor for a Chronic Seizure Detection System

TL;DR: In this article, a low-power SoC that performs EEG acquisition and feature extraction required for continuous detection of seizure onset in epilepsy patients is presented, and the SoC corresponds to one EEG channel, and, depending on the patient, up to 18 channels may be worn to detect seizures as part of a chronic treatment system.
Proceedings Article

A Micro-Power EEG Acquisition SoC With Integrated Feature Extraction Processor for a Chronic Seizure Detection System

TL;DR: This paper presents a low-power SoC that performs EEG acquisition and feature extraction required for continuous detection of seizure onset in epilepsy patients and lowers system power by 14× by reducing the rate of wireless EEG data transmission.
Journal ArticleDOI

A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy

TL;DR: A high density SRAM in 65 nm CMOS that uses an 8T bit-cell to achieve a minimum operating voltage of 350 mV, and the plaguing area-offset tradeoff in modern sense-amplifiers is alleviated using redundancy.