Showing papers by "Nikolay N. Mikhailov published in 2006"

Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n -HgCdTe ( x = 0.21–0.23)

Abstract: Voltage, frequency, and temperature dependences of photo-emf are experimentally studied in the MIS HgCdTe/SiO 2 /Si 3 N 4 and HgCdTe/AOF structures The MIS structures were produced on the basis of graded-bandgap Hg 1−x Cd x Te films grown by molecular-beam epitaxy on GaAs substrates It is found that the subsurface graded-band-gap layers do affect the photoelectrical characteristics of MIS structures The mechanisms limiting the differential resistance in the space-charge region at various temperatures are revealed

THE DYNAMICS OF ACCUMULATION OF ELECTRICALLY ACTIVE RADIATION DEFECTS ON IMPLANTATION OF GRADED-BAND-GAP HgCdTe FILMS GROWN BY MBE

Abstract: The dynamics of accumulation of electrically active radiation defects under ion doping of epitaxial Cd x Hg 1−x Te films is studied for various distributions of film composition in the implantation region. The epitaxial films were irradiated by boron ions at room temperature in the continuous regime, with the dose ranging within 1011−3·1015 cm−2, energy — 20–150 keV, and ion current density — j = 0.001–0.2 µA·cm−2. It is found that the natural logarithm of the introduction rate of electrically active radiation defects linearly depends on the epitaxial-film composition in the range of mean projected path of implanted ions. An analysis of the experimental data shows that the dynamics of accumulation of electrically active radiation defects is determined by the epitaxial-film composition in the implantation region.