Showing papers by "Nils Weimann published in 1997"
TL;DR: In this paper, a short-gate GaN/GaN on SiC substrates has been fabricated and characterized with gate lengths in the 1.12-1.25 μm range, where the average electron transit velocity is 1.25 × 107 cm/s.
Abstract: Short-gate MODFET’s of AlGaN/GaN on Sapphire have been fabricated and characterized with gate lengths in the.12–.25 μm range. Values of ft = 50 GHz and fmax = 100 GHz have been obtained. Analyzing the performance, the average electron transit velocity is shown to be 1.25 × 107 cm/s and in some cases well under that value. This compares with theoretical predictions of ~ 2.0 × 107 cm/s. The electron scattering effects of dislocations, which are charged, are modeled to explain the lower mobility. Ion bombardment or dry etching is used for mesa isolation. Ti/Al/Ti/Au sintered for 100 seconds at 800 °C is used to yield ohmic contacts of.5–1.0 Ω-mm. Pt/Au Schottky gates are used. A high breakdown voltage, exceeding 100 V even for short gate MODFET’s, shows that ten times higher load resistance values are possible, compared with GaAs MODFET’s. Normalized output power levels well over 10 W/ mm are thus projected for GaN MODFET’s on SiC substrates, where the thermal conductivity is about 5W/cm-°C. with future integrated traveling-wave, power-combining circuits, output power > 100 W at 10 GHz is predicted.
23 citations