Showing papers by "Nils Weimann published in 2013"
Proceedings Article•
19 Dec 2013TL;DR: In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated, where a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters.
Abstract: In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters. It is shown that the model prediction of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies (77 GHz).
5 citations
21 Oct 2013
TL;DR: In this article, the authors presented a novel InP DHBT-SiGe BiCMOS technology platform by wafer-scale heterogeneous integration, which provides vertical stacking of processed InP-DHBT wafers directly on top of processed Bi-CMOS wafer with low-loss ultrabroadband interconnects up to 200 GHz.
Abstract: This work presents a novel InP DHBT-SiGe BiCMOS technology platform by wafer-scale heterogeneous integration The technology provides vertical stacking of processed InP DHBT wafers directly on top of processed BiCMOS wafer with low-loss ultrabroadband interconnects up to 200 GHz We demonstrate first MMIC operating up to 300 GHz
3 citations