A system for assisting a person to maintain a blood glucose level between predetermined limits comprises: an electric device (380), comprising a display (382), a clock, a memory, and a processor; and a software program executable by the processor of the electronic device (380), adapted to receive nutritional data of food consumed by the person, adapted to calculate the blood glucose level for the person using the nutritional data and a glycemic response model for the person, and further adapted to present the blood glucose level to the person on the display (382) of the electronic device (380).

Closed loop glycemic index system

An interference modulator (Imod) incorporates anti-reflection coatings and/or micro-fabricated supplemental lighting sources. An efficient drive scheme is provided for matrix addressed arrays of IMods or other micromechanical devices. An improved color scheme provides greater flexibility. Electronic hardware can be field reconfigured to accommodate different display formats and/or application functions. An IMod's electromechanical behavior can be decoupled from its optical behavior. An improved actuation means is provided, some one of which may be hidden from view. An IMod or IMod array is fabricated and used in conjunction with a MEMS switch or switch array. An IMod can be used for optical switching and modulation. Some IMods incorporate 2-D and 3-D photonic structures. A variety of applications for the modulation of light are discussed. A MEMS manufacturing and packaging approach is provided based on a continuous web fed process. IMods can be used as test structures for the evaluation of residual stress in deposited materials.

Photonic mems and structures

In situ spectroelectrochemical characterization of poly(3,4-ethylenedioxythiophene)

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

http://iopscience.iop.org/article/10.1088/0022-3727/40/20/S19/pdf

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

A physiological monitor utilizes Faraday rotation measurements to estimate mean photon pathlengths through tissue. These pathlength estimates, along with corresponding optical spectroscopy measurements allow the noninvasive monitoring of blood constituent concentrations. The technique is particularly applicable to noninvasive blood glucose measurements. The physiological monitor has a polarized light source for illuminating tissue and a magnetic field generator which creates a magnetic field within the tissue during illumination. The magnetic field imparts a Faraday rotation in the plane of polarization of the incident light beam as it propagates through the tissue and emerges as a transmitted light beam. A polarimeter is used to measure the rotation of the transmitted light. A signal processor then computes an estimate of the mean pathlength from the polarimeter output. The polarized light source has a multiple wavelength optical emitter and, in conjunction with the polarimeter detector, also functions as a spectrometer. The signal processor combines spectroscopic measurements at various wavelengths with corresponding mean pathlength estimates to compute blood constituent concentrations.

Optical spectroscopy pathlength measurement system

Novel organosynthetic routes to polythiophene and its derivatives

A method of manufacturing an organic electronic device having a substrate and a pair of electrodes facing each other, including the steps of forming a polytetrafluoroethylene oriented film on a substrate, and contacting an oligothiophene compound with the polytetrafluoroethylene oriented film to form an organic oriented film on the polytetrafluoroethylene oriented film between the pair of electrodes wherein the long axis of oligothiophene molecules is oriented to the orientation of the polytetrafluoroethylene oriented film and crystallized.

Method of manufacturing organic oriented film and method of manufacturing electronic device

The excess of C atoms diffused into the (111) Si substrate during the growth of the cubic SiC films are detected by Auger electron spectroscopy, infrared absorption, and x-ray photoelectron spectroscopy. The diffusion coefficient of the C atoms into the Si substrate at 820 °C is 8.4×10−15 cm2 s−1, which is close to the value of the diffusion of the C atoms into Si crystal using solid source. The C atoms mainly occupy substitutional sites in the Si substrate when the substrate temperature is below 750 °C, and both substitutional and nonsubstitutional sites when it is above 820 °C.

Outdiffusion of the excess carbon in SiC films into Si substrate during film growth

Detailed characterization using x-ray diffractometry, scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and Auger infrared and focused ion-beam spectroscopy, was carried out on cubic SiC films grown on single-crystal (100) Si substrates by reactive hydrogen plasma sputtering over a range of growth temperatures between 700 and 1000 °C. It was found that the first few deposited atomic layers were always amorphous. The subsequent SiC films showed well-defined (111) growth at the lowest temperatures, becoming randomly oriented by 1000 °C. The measured C:Si ratio was always >1, and varied with depth inside a film and also with temperature. At higher temperatures, the presence of “hollow voids” was observed, our data being consistent with their formation by outdiffusion of Si atoms from the substrate through the SiC layer. Associated with the hollow voids we observed the presence of a porous, highly C-rich region at the Si–SiC interface. We propose that this was d...

Characterization of 3C-SiC films grown on monocrystalline Si by reactive hydrogen plasma sputtering

A hologram recording device, which comprises a recording layer of a polymer composition a photoconductive element, a second-order super-polarization element and an electron or hole capturing material and having a non-centro symmetric structure is disclosed. Transparent electrode layers are provided on each side of the recording layer. The hologram recording device is capable of space light modulation and real time hologram recording. Also disclosed is a method of manufacturing the hologram recording device and a method of hologram recording using the device. The hologram recording material is of a polymer composition a photoconductive element, a second-order super-polarization element and an electron or hole capturing element. The polymer composition has a non-centro symmetric structure. The hologram recording device according to the invention comprises a recording layer of a polymer composition including a photoconductive element and a second-order super-polarization element. The polymer composition has a non-centro symmetric structure, and transparent electrodes are provided on each side of the recording layer. It is thus possible to provide a hologram recording element, which is suitable for space light modulation and real time hologram recording and which also serves as a phase conjugate device.

Nobuo Sonoda

Papers

Novel organosynthetic routes to polythiophene and its derivatives

Method of manufacturing organic oriented film and method of manufacturing electronic device

Outdiffusion of the excess carbon in SiC films into Si substrate during film growth

Characterization of 3C-SiC films grown on monocrystalline Si by reactive hydrogen plasma sputtering

Hologram recording material