Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

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Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

羟氨苄青霉素引起大疱性类天疱疮样疹

Tables of integrals

Scientists study the coupling, guiding and polarizing of electromagnetic waves in graphene and demonstrate a graphene-based fibre polarizer that exhibits a transverse-electric-pass polarization at an extinction ratio of up to ∼27 dB in the telecommunications band.

https://www.dstuns.iitm.ac.in/grouppresentations/2011/Broadband%20graphene%20polarizer.pdf

Broadband graphene polarizer

Bloch equation conductivity perpendicular to the layers of a superlattice (period d) is evaluated using an extension of the balance-equation approach [X. L. Lei and C. S. Ting, Phys. Rev. B 32, 1112 (1985)] to narrow-band transport. The perpendicular peak drift velocity ${\mathit{v}}_{\mathit{p}}$ and the critical field ${\mathit{E}}_{\mathit{c}}$, at which the drift velocity peaks, are analyzed as functions of miniband width. Our theoretical prediction that ${\mathit{E}}_{\mathit{c}}$d increases with decreasing miniband width agrees well with the data of Sibille et al. [Phys. Rev. Lett. 64, 52 (1990)], even for the samples of narrowest miniband width in their experiment.

Theory of negative differential conductivity in a superlattice miniband.

The terahertz absorption spectrum of plasmon modes in a grid-gated double-quantum-well (DQW) field-effect transistor structure is analyzed theoretically and numerically using a first principles electromagnetic approach and is shown to faithfully reproduce important physical features of recent experimental observations. We find that the essential character of the response—multiple resonances corresponding to spatial harmonics of standing plasmons under the metal grating—is caused by the static spatial modulation of electron density in the channel. Higher order plasmon modes become more optically active as the depth of the electron density modulation in the DQW tends towards unity. The maximum absorbance, at plasma resonance, is shown to be 1/2. Furthermore, the strongest absorption also occurs when the standing plasmon resonance coincides with the fundamental dipole mode of the ungated portion of the channel.

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

Complex Plasmas- Classical and Quantum Plasmas- Principles of Transport in Multicomponent Plasmas- to Quantum Plasmas- to Quantum Plasma Simulations- Quantum Effects in Plasma Dielectric Response: Plasmons and Shielding in Normal Systems and Graphene- Strongly Coupled and Dusty Plasmas- Imaging Diagnostics in Dusty Plasmas- Structure and Dynamics of Finite Dust Clusters- Statistical Theory of Spherically Confined Dust Crystals- PIC-MCC Simulations of Capacitive High-Frequency Discharge Dynamics with Nanoparticles- Molecular Dynamics Simulation of Strongly Correlated Dusty Plasmas- Reactive Plasmas, Plasma-Surface Interaction, Technological Applications- Nonthermal Reactive Plasmas- Formation and Deposition of Nanosize Particles on Surfaces- Kinetic and Diagnostic Studies of Molecular Plasmas Using Laser Absorption Techniques- X-Ray Diagnostics of Plasma-Deposited Thin Layers- The Use of Nonthermal Plasmas in Environmental Applications- Complex (Dusty) Plasmas: Application in Material Processing and Tools for Plasma Diagnostics

/pdf/introduction-to-complex-plasmas-4zn32t8798.pdf

Introduction to complex plasmas

General characterization of semiconductors electronic structure of ideal crystals electronic structure of semiconductor crystals in the presence of internal and external perturbations electron system in thermodynamic equilibrium interaction of semiconductors with light non-equilibrium processes in semiconductors semiconductor junctions in thermodynamic equilibrium semiconductor junctions at non-equilibrium.

Norman J. M. Horing

Papers

Theory of negative differential conductivity in a superlattice miniband.

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

Introduction to complex plasmas

Fundamentals of semiconductor physics and devices

Quantum theory of electron gas plasma oscillations in a magnetic field