O
O. Hipólito
Researcher at Universidade de Mogi das Cruzes
Publications - 5
Citations - 21
O. Hipólito is an academic researcher from Universidade de Mogi das Cruzes. The author has contributed to research in topics: Effective mass (solid-state physics) & Capacitance. The author has an hindex of 2, co-authored 5 publications receiving 21 citations.
Papers
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Journal ArticleDOI
On the capacitance-voltage modeling of strained quantum-well MODFETs
TL;DR: In this article, a theoretical model for the capacitance-voltage characteristics of MODFETs is developed, based on a self-consistent solution of the Schrodinger and Poisson equations.
Journal ArticleDOI
Finite superlattice with a localized state: a possible new submillimeter wave emitter, in a numerical simulation
José E. Manzoli,O. Hipólito +1 more
TL;DR: In this paper, a semiconductor heterostructure consisting of six coupled quantum wells of GaAs plus a larger one, all inside Al( x )Ga(1− x )As, x = 0.35, was proposed to prevent the localized electronic eigenstate at the large well, the Tamm state, oscillating when the voltage applied across these "finite superlattices" varies fast.
Journal ArticleDOI
Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors
TL;DR: In this article, a selfconsistent solution of Schrodinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulation-doped field effect transistors.
Proceedings Article
Stress-Related Effects on the C-V Characteristics of Pseudomorphic MODFETs
TL;DR: In this article, a theoretical model for the capacitance-voltage characteristics of strained MODFETs is developed, based on a self-consistent solution of Schrodinger and Poisson equations.
Journal ArticleDOI
Numerical gate capacitance-voltage characteristics and electronic structure of MBE silicon delta-FETs
José E. Manzoli,O. Hipólito +1 more
TL;DR: In this paper, a self-consistent numerical calculation of the electronic structure of field effect transistors where the electric transport channel is a quasi-two-dimensional plan of antimonide doping in a silicon crystal is presented.