We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 x 10(8) to 1 x 10(12) cm-2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.

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The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Characterization of vacuum-evaporated tin sulfide film for solar cell materials

Epitaxial films of the solid solution Ga1-xInxN (up to X=0.42) have been fabricated on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) at 500°C. The properties of the films have been studied by the reflection high-energy electron diffraction technique, X-ray diffraction, and electrical and optical measurements. The fundamental absorption edge of the film decreases linearly with composition (up to X=0.42) from 3.20 eV to 2.01 eV at room temperature.

https://iopscience.iop.org/article/10.1143/JJAP.28.L1334/pdf

Properties of Ga1-xInxN Films Prepared by MOVPE

A rechargeable all‐plastic battery was fabricated using film as the electrode active material and [ in polyvinylidene fluoride (PVDF)] film as the electrolyte. The battery exhibited an open‐circuit voltage of 3.4V, and an initial short‐circuit current of 13 mA (weight of electrode: ca. 4 mg; doping level, ). Experimental energy density of 47 Wh/kg was obtained based on the weight of film (weight of electrode: ca. 4 mg, doping level ). No change in the coulombic and power efficiencies of a battery could be observed even after 300 successive charge‐discharge cycles, although doping level was shallow . The coulombic efficiency was 82%. The ionic conductivity of polymeric solid electrolyte was estimated from a complex impedance analysis.

Osamu Omoto

Papers

Characterization of vacuum-evaporated tin sulfide film for solar cell materials

Properties of Ga1-xInxN Films Prepared by MOVPE

All‐Plastic Batteries with Polyacetylene Electrodes

Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility

Preparation of highly c-axis-oriented Bi4Ti3O12 thin films and their crystallographic, dielectric and optical properties