P
P. Baeri
Researcher at University of Catania
Publications - 66
Citations - 1520
P. Baeri is an academic researcher from University of Catania. The author has contributed to research in topics: Silicon & Amorphous solid. The author has an hindex of 17, co-authored 66 publications receiving 1485 citations.
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A melting model for pulsing‐laser annealing of implanted semiconductors
TL;DR: In this paper, the transition to single crystal of ion-implanted amorphous Si and Ge layers is described in terms of a liquid phase epitaxy occurring during pulsing-laser irradiation.
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Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing
TL;DR: In this paper, the time evolution of temperature and melting in amorphous silicon layers laser irradiated was calculated numerically, and a good agreement was found between the experimental As profiles after laser irradiation and those calculated with a diffusion coefficient of 10−4 cm2/s for As in liquid silicon.
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Orientation and velocity dependence of solute trapping in Si
TL;DR: In this article, interface segregation coefficients have been measured for Bi in Si for melt growth as a function of velocity for (111) and (100) crystals, and surface layers were melted by ruby laser irradiation and liquid-solid interface velocities varied from 0.8 to 5 m/s by changing Si substrate temperatures or laser pulse length.
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Segregation Effects in Cu-Implanted Si after Laser-Pulse Melting
TL;DR: In this paper, the authors show that the formation of a liquid layer induced by laser irradiation leads to surface accumulation of Cu atoms at the sample surface, in agreement with diffusion coefficient and solid solubility values.
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Solute trapping by moving interface in ion‐implanted silicon
TL;DR: In this article, it was shown that the epitaxial growth occurs with velocities which differ up to ten orders of magnitude after furnace or laser annealing, the supersaturation is interpreted as due to the same basic mechanism: solute trapping at the moving interface when the residence time is larger than the one monolayer regrowth time.