A 1.5-V 100-mA capacitor-free CMOS low-dropout regulator (LDO) for system-on-chip applications to reduce board space and external pins is presented. By utilizing damping-factor-control frequency compensation on the advanced LDO structure, the proposed LDO provides high stability, as well as fast line and load transient responses, even in capacitor-free operation. The proposed LDO has been implemented in a commercial 0.6-/spl mu/m CMOS technology, and the active chip area is 568 /spl mu/m/spl times/541 /spl mu/m. The total error of the output voltage due to line and load variations is less than /spl plusmn/0.25%, and the temperature coefficient is 38 ppm//spl deg/C. Moreover, the output voltage can recover within 2 /spl mu/s for full load-current changes. The power-supply rejection ratio at 1 MHz is -30 dB, and the output noise spectral densities at 100 Hz and 100 kHz are 1.8 and 0.38 /spl mu/V//spl radic/Hz, respectively.

A capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation

This paper presents a low-dropout regulator (LDO) for portable applications with an impedance-attenuated buffer for driving the pass device. Dynamically-biased shunt feedback is proposed in the buffer to lower its output resistance such that the pole at the gate of the pass device is pushed to high frequencies without dissipating large quiescent current. By employing the current-buffer compensation, only a single pole is realized within the regulation loop unity-gain bandwidth and over 65deg phase margin is achieved under the full range of the load current in the LDO. The LDO thus achieves stability without using any low-frequency zero. The maximum output-voltage variation can be minimized during load transients even if a small output capacitor is used. The LDO with the proposed impedance-attenuated buffer has been implemented in a 0.35-mum twin-well CMOS process. The proposed LDO dissipates 20-muA quiescent current at no-load condition and is able to deliver up to 200-mA load current. With a 1-muF output capacitor, the maximum transient output-voltage variation is within 3% of the output voltage with load step changes of 200 mA/100 ns.

/pdf/a-transient-enhanced-low-quiescent-current-low-dropout-119enznkif.pdf

A Transient-Enhanced Low-Quiescent Current Low-Dropout Regulator With Buffer Impedance Attenuation

A stable low dropout (LDO) voltage regulator topology for low equivalent series resistance (ESR) capacitive loads is presented. The proposed scheme generates a zero internally instead of relying on the zero generated by the load capacitor and its ESR combination for stability. It is demonstrated that this scheme realizes robust frequency compensation, facilitates the use of multilayer ceramic capacitors for the load of LDO regulators, and improves transient response and noise performance. Test results from a prototype fabricated in AMI 0.5-/spl mu/m CMOS technology provide the most important parameters of the regulator viz., ground current, load regulation, line regulation, output noise, and start-up time.

A frequency compensation scheme for LDO voltage regulators

A high slew-rate amplifier with push-pull output driving capability is proposed to enable an ultra-low quiescent current (Iq ~ 1muA) low-dropout (LDO) regulator with improved transient responses. The proposed amplifier eliminates the tradeoff between small Iq and large slew-rate that is imposed by the tail-current in conventional amplifier design. Push-pull output stage is introduced to enhance the output driving ability. Small dropout voltage (Vbo) with large-size pass transistor and ultra-low Iq can thus be used to minimize power loss of LDO regulator without transient-response degradation. The proposed amplifier helps to improve stability of LDO regulators without using any on-chip and off-chip compensation capacitors. This is beneficial to chip-level power management requiring high-area efficiency. An LDO regulator with the proposed amplifier has been implemented in a 0.18- mum standard CMOS process and occupies 0.09 mm2. The LDO regulator can deliver 50-mA load current at 1-V input and ~ 100-mV VDO . It only consumes 1.2 muA Iq and is able to recover within ~ 4 mus even under the worst case scenario.

/pdf/a-high-slew-rate-push-pull-output-amplifier-for-low-vw851eqr5j.pdf

A High Slew-Rate Push–Pull Output Amplifier for Low-Quiescent Current Low-Dropout Regulators With Transient-Response Improvement

A CMOS voltage reference, which is based on the weighted difference of the gate-source voltages of an NMOST and a PMOST operating in saturation region, is presented. The voltage reference is designed for CMOS low-dropout linear regulators and has been implemented in a standard 0.6-/spl mu/m CMOS technology (V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C). The occupied chip area is 0.055 mm/sup 2/. The minimum supply voltage is 1.4 V, and the maximum supply current is 9.7 /spl mu/A. A typical mean uncalibrated temperature coefficient of 36.9 ppm//spl deg/C is achieved, and the typical mean line regulation is /spl plusmn/0.083%/V. The power-supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz are -47 and -20 dB, respectively. Moreover, the measured noise density with a 100-nF filtering capacitor at 100 Hz is 152 nV//spl radic/(Hz) and that at 100 kHz is 1.6 nV//spl radic/(Hz).

http://web.mit.edu/Magic/Public/papers/IEEEXplore(11).pdf

A CMOS voltage reference based on weighted /spl Delta/V/sub GS/ for CMOS low-dropout linear regulators

Typical low drop-out (LDO) regulator architectures suffer from an inherent load regulation performance limitation. This limitation manifests itself through limited DC open-loop gain, and results from stringent closed-loop bandwidth requirements. The frequency response of the system is highly sensitive to the loading conditions, thereby making proper compensation a laborious endeavor. This paper discusses and addresses the limitation on regulating performance imposed by frequency compensation. Several LDO circuit topologies are subsequently developed to this end. They enhance load regulation performance by relaxing the DC open-loop gain restrictions. The circuit structures essentially alter the frequency response of the system via the error amplifier. A low drop-out regulator adopting an embodiment of the proposed technique was fabricated in the MOSIS 2-/spl mu/m process technology. The system, designed for an output capacitor of 4.7 /spl mu/F, was stable with an equivalent series resistance (ESR) ranging from 0 to 12 /spl Omega/, bypass capacitors ranging from 0 to 2.2 /spl mu/F, and a load current ranging from 0 to 50 mA.

P.E. Allen

Papers

Optimized frequency-shaping circuit topologies for LDOs