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P. Gondoni

Researcher at Polytechnic University of Milan

Publications -  17
Citations -  560

P. Gondoni is an academic researcher from Polytechnic University of Milan. The author has contributed to research in topics: Pulsed laser deposition & Thin film. The author has an hindex of 9, co-authored 17 publications receiving 423 citations.

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Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide

TL;DR: In this article, a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structures and morphologies and synthesized by pulsed laser deposition under different oxygen pressure conditions is presented.
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Structural and functional properties of Al:ZnO thin films grown by Pulsed Laser Deposition at room temperature

TL;DR: In this article, Al-doped ZnO (AZO) thin films were grown by Pulsed Laser Deposition at room temperature in oxygen atmosphere, and the O 2 pressure was varied from 0.01 to 10
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Structure-dependent optical and electrical transport properties of nanostructured Al-doped ZnO

TL;DR: The dependence of functional properties on structure and morphology is investigated and it is shown how the correlation between electrical and optical properties can be studied to evaluate energy gap, conduction band effective mass and transport mechanisms.
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Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide

TL;DR: In this paper, a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structure and morphology and synthesized by pulsed laser deposition (PLD) under different oxygen pressure conditions is presented.
Journal ArticleDOI

Structure-dependent optical and electrical transport properties of nanostructured Al-doped ZnO.

TL;DR: In this article, the dependence of functional properties on structure and morphology of nanostructured Al-doped ZnO thin films has been investigated, with particular emphasis on how they affect optical and electrical properties.