P
P. M. Fahey
Researcher at Stanford University
Publications - 2
Citations - 1218
P. M. Fahey is an academic researcher from Stanford University. The author has contributed to research in topics: Diffusion (business) & Wafer. The author has an hindex of 2, co-authored 2 publications receiving 1189 citations.
Papers
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Journal ArticleDOI
Point defects and dopant diffusion in silicon
TL;DR: In this paper, the authors present the current state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion.
Journal ArticleDOI
Measurement of silicon interstitial diffusivity
TL;DR: In this paper, a conceptually simple experiment to measure silicon interstitial diffusivity is described, where a silicon wafer with buried layers deep in the bulk is used to demonstrate that the interstitials move significantly faster than previously thought.