THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

IEEE transactions on computer-aided design of integrated circuits and systems : a publication of the IEEE Circuits and Systems Society

An experimental technique is described for observing the effects of switching transients in digital MOS circuits that perturb analog circuits integrated on the same die by means of coupling through the substrate Various approaches to reducing substrate crosstalk (the use of physical separation of analog and digital circuits, guard rings, and a low-inductance substrate bias) are evaluated experimentally for a CMOS technology with a substrate comprising an epitaxial layer grown on a heavily doped bulk wafer Observations indicate that reducing the inductance in the substrate bias is the most effective Device simulations are used to show how crosstalk propagates via the heavily doped bulk and to predict the nature of substrate crosstalk in CMOS technologies integrated in uniform, lightly doped bulk substrates, showing that in such cases the substrate noise is highly dependent on layout geometry A method of including substrate effects in SPICE simulations for circuits fabricated on epitaxial, heavily doped substrates is developed >

Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits

We describe a new method for determining component values and transistor dimensions for CMOS operational amplifiers (op-amps). We observe that a wide variety of design objectives and constraints have a special form, i.e., they are posynomial functions of the design variables. As a result, the amplifier design problem can be expressed as a special form of optimization problem called geometric programming, for which very efficient global optimization methods have been developed. As a consequence we can efficiently determine globally optimal amplifier designs or globally optimal tradeoffs among competing performance measures such as power, open-loop gain, and bandwidth. Our method, therefore, yields completely automated sizing of (globally) optimal CMOS amplifiers, directly from specifications. In this paper, we apply this method to a specific widely used operational amplifier architecture, showing in detail how to formulate the design problem as a geometric program. We compute globally optimal tradeoff curves relating performance measures such as power dissipation, unity-gain bandwidth, and open-loop gain. We show how the method can he used to size robust designs, i.e., designs guaranteed to meet the specifications for a variety of process conditions and parameters.

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Optimal design of a CMOS op-amp via geometric programming

A new method to determine a parameter of a damascene interconnect in an integrated circuit device is achieved. Drawn dimensions and local pattern density of a damascene interconnect are extracted in an integrated circuit device. A parameter of the damascene interconnect is calculating using the drawn dimensions and the local pattern density to select a per unit value from a set of per unit values measured over a range of drawn dimension and pattern density combinations. The method may be used to improve the accuracy of extracted damascene metal line resistance and parasitic capacitance.

Methodology to characterize metal sheet resistance of copper damascene process

Techniques are presented to compactly represent substrate noise currents injected by digital networks. Using device-level simulation, every gate in a given library is modeled by means of the signal waveform it injects into the substrate, depending on its input transition scheme. For a given sequence of input vectors, the switching activity of every node in the Boolean network is computed. Assuming that technology mapping has been performed, each node corresponds to a gate in the library, hence, to a specific injection waveform. The noise contribution of each node is computed by convolving its switching activity with the associated injection waveforms. The total injected noise for the digital block is then obtained by summing all the noise contributions in the circuit. The resulting injected noise can be viewed as a random process, whose power spectrum is computed using standard signal processing techniques. A study was performed on a number of standard benchmark circuits to verify the validity of the assumptions and to measure the accuracy of the obtained power spectra.

/pdf/modeling-digital-substrate-noise-injection-in-mixed-signal-5gk6fsnb03.pdf

Modeling digital substrate noise injection in mixed-signal IC's

In the past decade, substrate noise has had a constant and significant impact on the design of analog and mixed-signal integrated circuits. Only recently, with advances in chip miniaturization and innovative circuit design, has substrate noise begun to plague fully digital circuits as well. To combat the effects of substrate noise, heavily over-designed structures are generally adopted, thus seriously limiting the advantages of innovative technologies. Substrate Noise: Analysis and Optimization for IC Design addresses the main problems posed by substrate noise from both an IC and a CAD designer perspective. The effects of substrate noise on performance in digital, analog, and mixed-signal circuits are presented, along with the mechanisms underlying noise generation, injection, and transport. Popular solutions to the substrate noise problem and the trade-offs often debated by designers are extensively discussed. Non-traditional approaches as well as semi-automated techniques to combat substrate noise are also addressed. Substrate Noise: Analysis and Optimization for IC Design will be of interest to researchers and professionals interested in signal integrity, as well as to mixed signal and RF designers.

Substrate noise: analysis and optimization for IC design

A methodology is presented for generating compact models of substrate noise injection in complex logic networks. For a given gate library, the injection patterns associated with a gate and an input transition scheme are accurately evaluated using device-level simulation. Assuming spatial independence of all noise generating devices, the cumulative switching noise resulting from all injection patterns is efficiently computed using a gate-level event-driven simulator. The resulting injected signal is then sampled and translated into an energy spectrum which accounts for fundamental frequencies as well as glitch energy. Preliminary results demonstrate the validity of the assumptions and the accuracy of the approach on a set of standard benchmark circuits.

SUBWAVE: a methodology for modeling digital substrate noise injection in mixed-signal ICs

In one disclosed embodiment, a number of parameter values for an RF MOSFET are received. Examples of parameter values are style, bulk contact, finger width, finger length, number of fingers, current, and slice parameter values. From the received parameter values, a number of parasitic values for a subcircuit model of the RF MOSFET are determined. For example, parasitic resistor values and parasitic capacitor values of the RF MOSFET are determined. The parasitic resistor values and parasitic capacitor values are used in simulating the circuit comprising the RF MOSFET. An RF MOSFET layout is then generated that results in parasitic values that are the same as the parasitic values already used in simulating the circuit comprising the RF MOSFET. As such, the parasitic values of the RF MOSFET have already been taken into account in the initial circuit simulation.

Paolo Miliozzi

Papers

Modeling digital substrate noise injection in mixed-signal IC's

Substrate noise: analysis and optimization for IC design

SUBWAVE: a methodology for modeling digital substrate noise injection in mixed-signal ICs

Method and system for predictive MOSFET layout generation with reduced design cycle

SubWave: a Methodology for Modeling Digital Substrate Noise Injection in Mixed-Signal ICs